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ContactRF MOSFETs Transistors(4200)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Voltage - Rated | Frequency | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Gain | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Noise Figure | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Max Output Power | Power - Output | Current Rating (Amps) | Min Breakdown Voltage | Current - Test | Drain Current-Max (Abs) (ID) | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | Transistor Type | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AFT18H356-24SR6 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 65V | 1.88GHz | ROHS3 Compliant | 2013 | NI-1230-4LS2L | 10 Weeks | EAR99 | 8541.29.00.40 | 260 | 40 | 15dB | 63W | 1.1A | 28V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF1202R,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 10V | 400MHz | ROHS3 Compliant | 2000 | /files/nxpusainc-bf1202r215-datasheets-6076.pdf | TO-253-4, TO-253AA | BF1202 | 4 | 30.5dB | 2013-06-14 00:00:00 | 0.9dB | 200mW | 30mA | 12mA | N-Channel Dual Gate | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| LET9070CB | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw | Bulk | 1 (Unlimited) | 150°C | -65°C | 945MHz | ROHS3 Compliant | /files/stmicroelectronics-let9070cb-datasheets-6910.pdf | 12A | M243 | 243 | EAR99 | No | 130W | LET9070 | 1 | 16dB | 12A | 15V | 80V | 80W | 400mA | LDMOS | 28V | ||||||||||||||||||||||||||||||||||||||||||||||
| AFV141KGSR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 105V | 1.4GHz | ROHS3 Compliant | 2016 | /files/nxpusainc-afv141khr5-datasheets-6004.pdf | NI-1230-4S GW | 10 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 17.7dB | 1000W | 100mA | LDMOS (Dual) | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1011HSR5 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 100V | 1.4GHz | ROHS3 Compliant | 2013 | NI-780S | 10 Weeks | EAR99 | 8541.29.00.75 | 260 | 40 | 18dB | 330W | 150mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1017NR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | 65V | 960MHz | ROHS3 Compliant | 2013 | OM-780-2 | 10 Weeks | EAR99 | 8541.29.00.40 | e3 | MATTE TIN | 260 | 40 | 20dB | 80W | 1.4A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| LET9060C | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Screw, Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | 945MHz | ENHANCEMENT MODE | ROHS3 Compliant | 12A | M243 | Lead Free | 2 | 3 | EAR99 | No | 130W | DUAL | FLAT | LET9060 | 2 | Single | 1 | FET General Purpose Power | 18dB | R-PDFM-F2 | 12A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 75W | 400mA | 7A | LDMOS | 28V | |||||||||||||||||||||||||||||||||
| BF1201R,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 10V | 400MHz | ROHS3 Compliant | 2000 | /files/nxpusainc-bf1201r215-datasheets-6101.pdf | SOT-143R | unknown | BF1201 | 4 | 29dB | 2013-06-14 00:00:00 | 1dB | 30mA | 15mA | N-Channel Dual Gate | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF6V12500GSR5 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 110V | 960MHz~1.215GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | NI-780GS-2L | 2 | 10 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 19.7dB | R-PDSO-G2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 110V | METAL-OXIDE SEMICONDUCTOR | 200μA | 200mA | LDMOS | 50V | ||||||||||||||||||||||||||||||||||||||||
| BF1206,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 6V | 400MHz | DUAL GATE, ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/nxpusainc-bf1206115-datasheets-6107.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | EAR99 | unknown | 8541.21.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | 6 | 150°C | 40 | 2 | FET General Purpose Power | 30dB | Not Qualified | R-PDSO-G6 | 1.3dB | SILICON | COMPLEX | AMPLIFIER | 0.18W | 6V | METAL-OXIDE SEMICONDUCTOR | 30mA | 18mA | 0.03A | 0.03 pF | N-Channel Dual Gate | 5V | |||||||||||||||||||||||||||||||
| MMRF1314HR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 105V | 1.4GHz | ROHS3 Compliant | 2016 | /files/nxpusainc-mmrf1314gsr5-datasheets-5988.pdf | SOT-979A | 10 Weeks | EAR99 | 8541.29.00.75 | NOT SPECIFIED | NOT SPECIFIED | 17.7dB | 1000W | 100mA | LDMOS (Dual) | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF909A,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 7V | 800MHz | ROHS3 Compliant | 1998 | /files/nxpusainc-bf909r215-datasheets-6115.pdf | TO-253-4, TO-253AA | BF909 | 2dB | 40mA | N-Channel Dual Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1007HR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 110V | 1.03GHz | ROHS3 Compliant | 2013 | NI-1230-4H | 10 Weeks | EAR99 | 8541.29.00.75 | 260 | 40 | 20dB | 1000W | 150mA | LDMOS (Dual) | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLF7G22L-200,118 | Ampleon USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 65V | 2.11GHz~2.17GHz | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/ampleonusainc-blf7g22l200118-datasheets-6062.pdf | SOT-502A | 2 | EAR99 | unknown | IEC-60134 | YES | DUAL | FLAT | NOT SPECIFIED | BLF7G22 | NOT SPECIFIED | 1 | 18.5dB | R-CDFM-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 65V | METAL-OXIDE SEMICONDUCTOR | 55W | 1.62A | LDMOS | 28V | |||||||||||||||||||||||||||||||||||||
| A2T26H160-24SR3 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 65V | 2.58GHz | ROHS3 Compliant | 2014 | NI-780S-4L2L | 10 Weeks | EAR99 | 8541.29.00.75 | 15.5dB | 28W | 350mA | LDMOS (Dual) | 28V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1317HSR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 105V | 1.03GHz | ROHS3 Compliant | 2013 | /files/nxpusainc-mmrf1317hsr5-datasheets-6013.pdf | NI-1230-4S | 10 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 18.2dB | 1300W | 100mA | LDMOS (Dual) | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1312GSR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 112V | 1.03GHz | ROHS3 Compliant | 2012 | /files/nxpusainc-mmrf1312gsr5-datasheets-6017.pdf | NI-1230-4S GW | 10 Weeks | EAR99 | 8541.29.00.75 | NOT SPECIFIED | NOT SPECIFIED | 19.6dB | 1000W | 100mA | LDMOS (Dual) | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF8P8300HR6 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 70V | 820MHz | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | NI-1230 | 4 | 10 Weeks | EAR99 | 8541.29.00.75 | YES | FLAT | 260 | MRF8P8300 | 225°C | 40 | 2 | FET General Purpose Power | 20.9dB | Not Qualified | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | SOURCE | AMPLIFIER | N-CHANNEL | 70V | METAL-OXIDE SEMICONDUCTOR | 96W | 2A | LDMOS (Dual) | 28V | ||||||||||||||||||||||||||||||||||||
| MRF6VP121KHSR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 110V | 1.03GHz | ROHS3 Compliant | 2010 | NI-1230S | 10 Weeks | EAR99 | 8541.29.00.75 | 260 | MRF6VP121 | 200°C | 40 | FET General Purpose Power | 20dB | Single | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1000W | 150mA | LDMOS (Dual) | 50V | |||||||||||||||||||||||||||||||||||||||||||||||
| MMRF1006HR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 120V | 450MHz | ROHS3 Compliant | 2005 | SOT-979A | 10 Weeks | EAR99 | 8541.29.00.75 | 260 | 40 | 20dB | 1000W | 150mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF24301HS-2450 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 2 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CGHV35150P | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | 125V | 2.9GHz~3.5GHz | 440206 | 12.3dB | 440206 | 150W | 500mA | HEMT | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| A3G26H501W17SR3 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | ROHS3 Compliant | /files/nxpusainc-a3g26h501w17sr3-datasheets-6031.pdf | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFV121KHR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 112V | 960MHz~1.22GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nxpusainc-afv121khr5-datasheets-5996.pdf | SOT-979A | 4 | 10 Weeks | EAR99 | 8541.29.00.75 | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 19.6dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | SOURCE | AMPLIFIER | N-CHANNEL | 112V | METAL-OXIDE SEMICONDUCTOR | 1000W | 100mA | LDMOS (Dual) | 50V | |||||||||||||||||||||||||||||||||||||||
| MMRF1009HSR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 110V | 1.03GHz | ROHS3 Compliant | 2014 | NI-780S | 10 Weeks | EAR99 | 8541.29.00.75 | 260 | 40 | 19.7dB | 500W | 200mA | LDMOS | 50V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF6V13250HSR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 120V | 1.3GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | NI-780S | 2 | 10 Weeks | EAR99 | 8541.29.00.75 | YES | DUAL | FLAT | 260 | MRF6V13250 | 225°C | 40 | 1 | FET General Purpose Power | 22.7dB | Not Qualified | R-CDFP-F2 | SILICON | SINGLE | SOURCE | AMPLIFIER | N-CHANNEL | 476W | 120V | METAL-OXIDE SEMICONDUCTOR | 250W | 100mA | LDMOS | 50V | ||||||||||||||||||||||||||||||||||
| PD85035-E | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 3 (168 Hours) | 165°C | -65°C | 870MHz | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stevaltdr031v1-datasheets-4788.pdf | 8A | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | Lead Free | 2 | 25 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 95W | DUAL | GULL WING | 250 | PD85035 | 10 | Single | 30 | 95W | 1 | FET General Purpose Power | 17dB | R-PDSO-G2 | 8A | 15V | SOURCE | AMPLIFIER | N-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 40W | 15W | 40V | 350mA | 8A | 40V | LDMOS | 13.6V | ||||||||||||||||||||||
| MMRF1314HSR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 105V | 1.4GHz | ROHS3 Compliant | 2016 | /files/nxpusainc-mmrf1314gsr5-datasheets-5988.pdf | NI-1230-4S | 10 Weeks | EAR99 | 8541.29.00.75 | NOT SPECIFIED | NOT SPECIFIED | 17.7dB | 1000W | 500mA | LDMOS (Dual) | 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF6VP121KHR5 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | Not Applicable | 110V | 1.03GHz | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | NI-1230 | 4 | 10 Weeks | EAR99 | 8541.29.00.75 | YES | FLAT | 260 | MRF6VP121 | 200°C | 40 | 2 | FET General Purpose Power | 20dB | R-CDFM-F4 | SILICON | COMMON SOURCE, 2 ELEMENTS | SOURCE | AMPLIFIER | N-CHANNEL | 110V | METAL-OXIDE SEMICONDUCTOR | 1000W | 150mA | LDMOS (Dual) | 50V | |||||||||||||||||||||||||||||||||||||
| GTVA107001EC-V1-R250 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GaN | 125V | 960MHz~1.215GHz | SOT-957A | 20dB | 700W | 100mA | HEMT | 50V |
