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ContactSingle IGBTs(3888)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Input Type | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Turn-Off Delay Time | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power - Max | JEDEC-95 Code | Reverse Recovery Time | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Turn On Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Turn Off Time-Nom (toff) | VCEsat-Max | Test Condition | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy |
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| IXYP20N65C3D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/ixys-ixyp20n65c3d1-datasheets-1912.pdf | TO-220-3 | 24 Weeks | unknown | 200W | 200W | 135 ns | 650V | 2.5V | 50A | 400V, 20A, 20 Ω, 15V | 2.5V @ 15V, 20A | PT | 30nC | 105A | 19ns/80ns | 430μJ (on), 350μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXXP12N65B4D1 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX4™ | Through Hole | -55°C~175°C TJ | Tube | Standard | 2017 | /files/ixys-ixxp12n65b4d1-datasheets-1871.pdf | TO-220-3 | 24 Weeks | compliant | 160W | 43ns | 650V | 38A | 400V, 12A, 20 Ω, 15V | 1.95V @ 15V, 12A | 34nC | 70A | 13ns/158ns | 440μJ (on), 220μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AIKP20N60CTAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2017 | /files/infineontechnologies-aikp20n60ctaksa1-datasheets-1872.pdf | TO-220-3 | 39 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 156W | 600V | 40A | 400V, 20A, 12 Ω, 15V | 2.05V @ 15V, 20A | Trench Field Stop | 120nC | 60A | 18ns/199ns | 310μJ (on), 460μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GPA030A135MN-FDR | SemiQ |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/semiq-gpa030a135mnfdr-datasheets-1874.pdf | TO-3 | TO-3PN | 329W | 450ns | 1350V | 60A | 600V, 30A, 5Ohm, 15V | 2.4V @ 15V, 30A | Trench Field Stop | 300nC | 90A | 30ns/145ns | 4.4mJ (on), 1.18mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGP12N120A3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2010 | /files/ixys-ixgp12n120a3-datasheets-1875.pdf | TO-220-3 | 3 | 30 Weeks | LOW CONDUCTION LOSS | unknown | 100W | SINGLE | 3 | 1 | Insulated Gate BIP Transistors | R-PSFM-T3 | SILICON | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | 100W | TO-220AB | 1.2kV | 202 ns | 3V | 22A | 1200V | 1545 ns | 20V | 5V | 3V @ 15V, 12A | PT | 20.4nC | 60A | ||||||||||||||||||||||||||||||||||||||
| IXGP30N60C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2009 | /files/ixys-ixgp30n60c3-datasheets-1839.pdf | TO-220-3 | Lead Free | 3 | 20 Weeks | 2.299997g | 3 | yes | e3 | Matte Tin (Sn) | 220W | NOT SPECIFIED | IXG*30N60 | 3 | Single | NOT SPECIFIED | 220W | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-220AB | 600V | 2.6V | 45 ns | 600V | 60A | 160 ns | 300V, 20A, 5 Ω, 15V | 20V | 5.5V | 3V @ 15V, 20A | PT | 38nC | 150A | 16ns/42ns | 270μJ (on), 90μJ (off) | |||||||||||||||||||||||||||||
| IXGP12N120A2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/ixys-ixga12n120a2-datasheets-1598.pdf | TO-220-3 | 3 | 16 Weeks | 2.299997g | 3 | yes | 75W | NOT SPECIFIED | IXG*12N120 | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 75W | TO-220AB | 1.2kV | 45 ns | 1.2kV | 24A | 1200V | 1750 ns | 960V, 12A, 100 Ω, 15V | 3V @ 15V, 12A | PT | 24nC | 48A | 15ns/680ns | 5.4mJ (off) | ||||||||||||||||||||||||||||||||||||
| NGB8206ANTF4G | Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | Logic | ROHS3 Compliant | 2012 | /files/littelfuseinc-ngb8206ansl3g-datasheets-1317.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | EAR99 | unknown | NOT SPECIFIED | NGB8206 | NOT SPECIFIED | 150W | 390V | 20A | 300V, 9A, 1k Ω, 5V | 1.9V @ 4.5V, 20A | 50A | -/5μs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AIKB30N65DF5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-aikb30n65df5atma1-datasheets-1877.pdf | 39 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGA30T65SHD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fga30t65shd-datasheets-1843.pdf | TO-3P-3, SC-65-3 | 5 Weeks | 6.401g | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 238W | NOT SPECIFIED | NOT SPECIFIED | 238W | 31.8 ns | 650V | 2.14V | 2.1V | 60A | 400V, 30A, 6 Ω, 15V | 2.1V @ 15V, 30A | Trench Field Stop | 54.7nC | 90A | 14.4ns/52.8ns | 598μJ (on), 167μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||
| AOK10B60D | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Alpha IGBT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 3 | 163W | Insulated Gate BIP Transistors | N-CHANNEL | 163W | 105 ns | 600V | 1.8V | 20A | 400V, 10A, 30 Ω, 15V | 20V | 1.8V @ 15V, 10A | 17.4nC | 40A | 10ns/72ns | 260μJ (on), 70μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MGD623N | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | Standard | RoHS Compliant | 2012 | /files/sanken-mgd623n-datasheets-1849.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 12 Weeks | yes | 150W | SINGLE | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 150W | 300 ns | 600V | 175 ns | 2.3V | 50A | 500 ns | 300V, 50A, 39 Ω, 15V | 2.3V @ 15V, 50A | 100A | 75ns/300ns | |||||||||||||||||||||||||||||||||||||||||
| IXYP15N65C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/ixys-ixyp15n65c3-datasheets-1886.pdf | TO-220-3 | 24 Weeks | 200W | 200W | 650V | 2.5V | 38A | 400V, 15A, 20 Ω, 15V | 2.5V @ 15V, 15A | PT | 19nC | 80A | 15ns/68ns | 270μJ (on), 230μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AIKB15N65DF5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Standard | /files/infineontechnologies-tle9012aquxuma1-datasheets-7439.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 39 Weeks | 650V | 15A | NPT | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXA20I1200PZ-TUB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™ | Surface Mount | Standard | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | 165W | 1200V | 38A | 600V, 15A, 56 Ω, 15V | 2.1V @ 15V, 15A | PT | 47nC | 48ns/230ns | 1.6mJ (on), 1.7mJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGA40T65UQDF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | /files/onsemiconductor-fga40t65uqdf-datasheets-1853.pdf | TO-3P-3, SC-65-3 | 14 Weeks | 6.401g | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | 231W | NOT SPECIFIED | NOT SPECIFIED | 231W | 89 ns | 650V | 1.67V | 80A | 400V, 40A, 6 Ω, 15V | 1.67V @ 15V, 40A | NPT | 306nC | 120A | 32ns/271ns | 989μJ (on), 310μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||
| STGP8M120DF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Standard | /files/stmicroelectronics-stgp8m120df3-datasheets-1858.pdf | TO-220-3 | 30 Weeks | compliant | 103ns | 1200V | 16A | 600V, 8A, 33 Ω, 15V | 2.3V @ 15V, 8A | Trench Field Stop | 32nC | 32A | 20ns/126ns | 390μJ (on), 370μJ (Off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STGWT20H60DF | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | /files/stmicroelectronics-stgwt20h60df-datasheets-1859.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | 32 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 167W | STGWT20 | Single | 167W | 90ns | 600V | 2V | 600V | 40A | 400V, 20A, 10 Ω, 15V | 2V @ 15V, 20A | Trench Field Stop | 115nC | 80A | 42.5ns/177ns | 209μJ (on), 261μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||
| IXYA20N65C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | XPT™, GenX3™ | Surface Mount | -55°C~175°C TJ | Standard | 2015 | /files/ixys-ixya20n65c3-datasheets-1861.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | compliant | 230W | 34ns | 650V | 20A | 400V, 20A, 20 Ω, 15V | 2.5V @ 15V, 20A | 30nC | 105A | 19ns/80ns | 430μJ (on), 650μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGP2N100 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2000 | /files/ixys-ixgp2n100-datasheets-1862.pdf | TO-220-3 | 3 | 6 Weeks | 2.299997g | yes | 8541.29.00.95 | e3 | Matte Tin (Sn) | 25W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 25W | TO-220AB | 1kV | 100 ns | 1kV | 4A | 1000V | 100 ns | 800V, 2A, 150 Ω, 15V | 20V | 8V | 2.7V @ 15V, 2A | 7.8nC | 8A | 15ns/300ns | 560μJ (off) | ||||||||||||||||||||||||||||||||
| IRG4BC15UD-LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2001 | /files/infineontechnologies-irg4bc15udstrlp-datasheets-5240.pdf | 600V | 14A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.652mm | 4.826mm | Lead Free | 3 | 13 Weeks | 2.084002g | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 49W | 260 | Single | 30 | 49W | 1 | Insulated Gate BIP Transistors | 17 ns | 20ns | 160 ns | SILICON | POWER CONTROL | N-CHANNEL | 28 ns | 600V | 2.02V | 37 ns | 2.4V | 14A | 400 ns | 480V, 7.8A, 75 Ω, 15V | 20V | 6V | 2.4V @ 15V, 7.8A | 23nC | 42A | 17ns/160ns | 240μJ (on), 260μJ (off) | |||||||||||||||||||||||||
| IRG4BC30FDSTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Standard | ROHS3 Compliant | 2004 | /files/infineontechnologies-irg4bc30fdstrrp-datasheets-1813.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | 260.39037mg | 3 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 100W | GULL WING | 260 | Single | 30 | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 100W | 42 ns | 600V | 69 ns | 1.8V | 31A | 620 ns | 480V, 17A, 23 Ω, 15V | 20V | 6V | 1.8V @ 15V, 17A | 51nC | 120A | 42ns/230ns | 630μJ (on), 1.39mJ (off) | ||||||||||||||||||||||||||||||||||
| IRG7CH30K10EF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | Standard | ROHS3 Compliant | 2013 | /files/infineontechnologies-irg7ch30k10ef-datasheets-1761.pdf | Die | 2 | 16 Weeks | EAR99 | YES | UPPER | NO LEAD | 1 | R-XUUC-N2 | SILICON | SINGLE | POWER CONTROL | N-CHANNEL | 38.5 ns | 1200V | 10A | 311 ns | 2.2 V | 600V, 10A, 22 Ω, 15V | 30V | 7.5V | 2.56V @ 15V, 10A | Trench | 4.8nC | 10ns/90ns | |||||||||||||||||||||||||||||||||||||||||||||
| IGW30N60H3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchStop® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/infineontechnologies-igw30n60h3fksa1-datasheets-1821.pdf | TO-247-3 | 3 | 17 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | *GW30N60 | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | POWER CONTROL | N-CHANNEL | 187W | 50 ns | 600V | 60A | 262 ns | 400V, 30A, 10.5 Ω, 15V | 2.4V @ 15V, 30A | Trench Field Stop | 165nC | 120A | 21ns/207ns | 1.38mJ | |||||||||||||||||||||||||||||||||||||
| FGH40T65SQD-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Standard | RoHS Compliant | 2016 | /files/onsemiconductor-fgh40t65sqdf155-datasheets-1762.pdf | TO-247-3 | 13 Weeks | EAR99 | compliant | NOT SPECIFIED | NOT SPECIFIED | 238W | 31.8ns | 650V | 80A | 400V, 10A, 6 Ω, 15V | 2.1V @ 15V, 40A | Trench Field Stop | 80nC | 160A | 16.4ns/86.4ns | 138μJ (on), 52μJ (off) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FGA30N65SMD | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2012 | /files/onsemiconductor-fga30n65smd-datasheets-1825.pdf | TO-3P-3, SC-65-3 | 16.2mm | 20.1mm | 5mm | 3 | 5 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | 300W | Single | 300W | 1 | Insulated Gate BIP Transistors | SILICON | POWER CONTROL | N-CHANNEL | 35ns | 650V | 2.29V | 41 ns | 650V | 60A | 125 ns | 400V, 30A, 6 Ω, 15V | 20V | 6V | 2.5V @ 15V, 30A | Field Stop | 87nC | 90A | 14ns/102ns | 716μJ (on), 208μJ (off) | ||||||||||||||||||||||||||||||
| FGA6530WDF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2015 | /files/onsemiconductor-fga6530wdf-datasheets-1765.pdf | TO-3P-3, SC-65-3 | 6 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 176W | NOT SPECIFIED | Single | NOT SPECIFIED | 176W | 81 ns | 650V | 2.2V | 60A | 400V, 30A, 6 Ω, 15V | 2.2V @ 15V, 30A | Trench Field Stop | 37.4nC | 90A | 12ns/42.4ns | 960μJ (on), 162μJ (off) | |||||||||||||||||||||||||||||||||||||||||||
| FGH20N60SFDTU-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2016 | TO-247-3 | 12 Weeks | 6.39g | yes | 165W | 165W | 40 ns | 600V | 2.8V | 40A | 400V, 20A, 10 Ω, 15V | 2.8V @ 15V, 20A | Field Stop | 66nC | 60A | 13ns/90ns | 430μJ (on), 130μJ (off) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXYY8N90C3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GenX3™, XPT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2014 | /files/ixys-ixyy8n90c3-datasheets-1778.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 24 Weeks | 3.949996g | AVALANCHE RATED | 125W | GULL WING | 4 | Single | 1 | Insulated Gate BIP Transistors | R-PSSO-G2 | SILICON | COLLECTOR | POWER CONTROL | N-CHANNEL | 125W | TO-252AA | 900V | 2.5V | 39 ns | 2.5V | 20A | 238 ns | 450V, 8A, 30 Ω, 15V | 20V | 6V | 2.5V @ 15V, 8A | 13.3nC | 48A | 16ns/40ns | 460μJ (on), 180μJ (off) | ||||||||||||||||||||||||||||||||||||
| IRG7PK42UD1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | RoHS Compliant |
