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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP12N50M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp12n50m2-datasheets-4131.pdf | TO-220-3 | Lead Free | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP12 | NOT SPECIFIED | FET General Purpose Power | 10A | Single | 500V | 85W Tc | N-Channel | 560pF @ 100V | 380m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 15nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM9N90ECZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm9n90ecic0g-datasheets-8050.pdf | TO-220-3 | 24 Weeks | 900V | 89W Tc | N-Channel | 2470pF @ 25V | 1.4 Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP6N40D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp6n40de3-datasheets-4566.pdf | TO-220-3 | 10.51mm | 9.01mm | 4.65mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 104W | 1 | FET General Purpose Power | 12 ns | 11ns | 8 ns | 14 ns | 6A | 30V | SILICON | SWITCHING | 400V | 400V | 3V | 104W Tc | TO-220AB | 6A | 1Ohm | N-Channel | 311pF @ 100V | 1 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 18nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| FDPF3N50NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdpf3n50nz-datasheets-4144.pdf | TO-220-3 Full Pack | 10.16mm | 15.87mm | 4.7mm | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 27W | 1 | FET General Purpose Power | 10 ns | 15ns | 17 ns | 26 ns | 3A | 25V | SILICON | ISOLATED | SWITCHING | 27W Tc | TO-220AB | 3A | 500V | N-Channel | 280pF @ 25V | 2.5 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 9nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| TK1K0A60F,S4X | Toshiba Semiconductor and Storage | $1.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk1k0a60fs4x-datasheets-4058.pdf | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF2LN60K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std2ln60k3-datasheets-9587.pdf | TO-220-3 Full Pack | Lead Free | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | STF2LN | 45W | 1 | 10 ns | 8.5ns | 21 ns | 23.5 ns | 2A | 30V | 20W Tc | 600V | N-Channel | 235pF @ 50V | 4.5 Ω @ 1A, 10V | 4.5V @ 50μA | 2A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP2N40-F080 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqp2n40f080-datasheets-4063.pdf | TO-220-3 | 3 | 8 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | Tin | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 7 ns | 30ns | 25 ns | 7 ns | 1.8A | 30V | SILICON | SWITCHING | 400V | 400V | 40W Ta | TO-220AB | 7.2A | 85 mJ | N-Channel | 150pF @ 25V | 5.8 Ω @ 900mA, 10V | 5V @ 250μA | 1.8A Tc | 5.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| FDB8444 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb8444-datasheets-3986.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 1.31247g | 5.5MOhm | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 167W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 78ns | 15 ns | 48 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | 167W Tc | 307 mJ | 40V | N-Channel | 8035pF @ 25V | 5.5m Ω @ 70A, 10V | 4V @ 250μA | 70A Tc | 128nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| CSD25402Q3AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 8-PowerVDFN | 5 | 6 Weeks | yes | compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 1 | R-PDSO-F8 | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 20V | 20V | 2.8W Ta 69W Tc | 35A | 148A | 0.0159Ohm | P-Channel | 1790pF @ 10V | 8.9m Ω @ 10A, 4.5V | 1.15V @ 250μA | 15A Ta 76A Tc | 9.7nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihg22n60ege3-datasheets-1867.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 19 Weeks | 38.000013g | Unknown | 180mOhm | 3 | No | 1 | Single | 227W | 1 | TO-247AC | 1.92nF | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | 600V | 2V | 227W Tc | 180mOhm | 600V | N-Channel | 1920pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 180 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| BUZ215 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 3 | FREDFET | NOT SPECIFIED | NO | SINGLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 75W | TO-220AB | 5A | 20A | 1.5Ohm | N-Channel | 2000pF @ 2A | 5A | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK39J60W,S1VQ | Toshiba Semiconductor and Storage | $10.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk39j60ws1vq-datasheets-4097.pdf | TO-3P-3, SC-65-3 | 16 Weeks | 3 | No | Single | 270W | 1 | 38.8A | 30V | 270W Tc | 600V | N-Channel | 4100pF @ 300V | 65m Ω @ 19.4A, 10V | 3.7V @ 1.9mA | 38.8A Ta | 110nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP3LN62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu3ln62k3-datasheets-4334.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 3Ohm | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | SINGLE | STP3LN | 3 | 45W | 1 | 9 ns | 7ns | 27 ns | 30 ns | 2.5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3.75V | 45W Tc | TO-220AB | 90 mJ | 620V | N-Channel | 386pF @ 50V | 3.75 V | 3 Ω @ 1.25A, 10V | 4.5V @ 50μA | 2.5A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| AOB66920L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 100V | 8.3W Ta 100W Tc | N-Channel | 2500pF @ 50V | 8m Ω @ 20A, 10V | 2.5V @ 250μA | 22.5A Ta 80A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPAW60R600CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipaw60r600cexksa1-datasheets-4125.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | No SVHC | 3 | yes | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 10.3A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 3V | 28W Tc | TO-220AB | 19A | 0.6Ohm | N-Channel | 444pF @ 100V | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 10.3A Tc | 20.5nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| R6015ANX | ROHM Semiconductor | $0.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | 10.3mm | 15.4mm | 4.8mm | 3 | 3 | yes | No | 260 | 3 | Single | 10 | 50W | 1 | FET General Purpose Powers | 50 ns | 50ns | 60 ns | 150 ns | 15A | 30V | SILICON | SWITCHING | 50W Tc | TO-220AB | 60A | 15 mJ | 600V | N-Channel | 1700pF @ 25V | 300m Ω @ 7.5A, 10V | 4.5V @ 1mA | 15A Ta | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| CPC3909CTR | IXYS Integrated Circuits Division | $0.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~110°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixysintegratedcircuitsdivision-cpc3909ztr-datasheets-7472.pdf | TO-243AA | 8 Weeks | 300mA | 400V | 1.1W Ta | N-Channel | 9 Ω @ 300mA, 0V | 300mA Ta | Depletion Mode | 0V | 15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM40020E_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40020ege3-datasheets-4030.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 40V | 150W Tc | N-Channel | 8000F @ 25V | 2.33mOhm @ 20A, 10V | 3.5V @ 250μA | 100A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18534Q5AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 8 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1mm | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD18534 | Single | NOT SPECIFIED | 1 | 5.2 ns | 5.5ns | 2 ns | 15 ns | 69A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.1W Ta 77W Tc | 13A | 229A | 0.0124Ohm | 6.5 pF | N-Channel | 1770pF @ 30V | 9.8m Ω @ 14A, 10V | 2.3V @ 250μA | 50A Ta | 11.1nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STU6N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf6n65m2-datasheets-4408.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 26 Weeks | 3.949996g | No SVHC | 1.2Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STU6N | NOT SPECIFIED | 19 ns | 7ns | 20 ns | 6.5 ns | 4A | 25V | 3V | 60W Tc | 650V | N-Channel | 226pF @ 100V | 1.35 Ω @ 2A, 10V | 4V @ 250μA | 4A Tc | 9.8nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TK1K7A60F,S4X | Toshiba Semiconductor and Storage | $0.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk1k7a60fs4x-datasheets-3978.pdf | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF820STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf820spbf-datasheets-4619.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 12 Weeks | 1.437803g | No | 1 | Single | 3.1W | 1 | D2PAK | 360pF | 8 ns | 8.6ns | 16 ns | 33 ns | 2.5A | 20V | 500V | 3.1W Ta 50W Tc | 3Ohm | 500V | N-Channel | 360pF @ 25V | 3Ohm @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 24nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| APT37M100B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt37m100l-datasheets-4922.pdf | 1kV | 37A | TO-247-3 Variant | Lead Free | 3 | 18 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1 | 44 ns | 40ns | 38 ns | 150 ns | 37A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1135W Tc | N-Channel | 9835pF @ 25V | 330m Ω @ 18A, 10V | 5V @ 2.5mA | 37A Tc | 305nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| CSD17576Q5BT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 950μm | EAR99 | AVALANCHE RATED | Gold | not_compliant | e4 | DUAL | NO LEAD | 260 | CSD17576 | Single | NOT SPECIFIED | 3.1W | 1 | 5 ns | 16ns | 3 ns | 23 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.1W Ta 125W Tc | 30A | 400A | 0.0029Ohm | N-Channel | 4430pF @ 15V | 2m Ω @ 25A, 10V | 1.8V @ 250μA | 100A Ta | 32nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| STSJ60NH3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stsj60nh3ll-datasheets-3999.pdf | 30V | 15A | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Lead Free | 8 | 4mOhm | EAR99 | LOW THRESHOLD | e4 | NICKEL PALLADIUM GOLD | DUAL | GULL WING | 260 | STSJ60 | 8 | 30 | 50W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | 65ns | 20 ns | 38 ns | 15A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3W Ta 50W Tc | 60A | 60A | 30V | N-Channel | 1810pF @ 25V | 5.7m Ω @ 7.5A, 10V | 1V @ 250μA | 60A Tc | 24nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| STF5N52K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu5n52k3-datasheets-4415.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.5Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF5N | 3 | Single | 25W | 1 | FET General Purpose Power | 9 ns | 11ns | 16 ns | 29 ns | 4.4A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 25W Tc | TO-220AB | 525V | N-Channel | 545pF @ 100V | 1.5 Ω @ 2.2A, 10V | 4.5V @ 50μA | 4.4A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STB4NK60Z-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std4nk60zt4-datasheets-6401.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STB4N | 3 | Single | 70W | 1 | FET General Purpose Power | 12 ns | 9.5ns | 16.5 ns | 29 ns | 4A | 30V | SILICON | SWITCHING | 70W Tc | 4A | 16A | 2Ohm | 120 mJ | 600V | N-Channel | 510pF @ 25V | 2 Ω @ 2A, 10V | 4.5V @ 50μA | 4A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| GA05JT03-46 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~225°C TJ | Bulk | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga05jt0346-datasheets-4010.pdf | TO-46-3 | 18 Weeks | 3 | 9A | 300V | 20W Tc | 240m Ω @ 5A | 9A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA68N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stwa68n60m6-datasheets-4016.pdf | TO-247-3 | 16 Weeks | compliant | NOT SPECIFIED | STWA68 | NOT SPECIFIED | 600V | 390W Tc | N-Channel | 4360pF @ 100V | 41m Ω @ 31.5A, 10V | 4.75V @ 250μA | 63A Tc | 106nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS60R600PFD7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™PFD7 | Through Hole | -40°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Stub Leads, IPak | 650V | 31W Tc | N-Channel | 344pF @ 400V | 600m Ω @ 1.7A, 10V | 4.5V @ 80μA | 6A Tc | 8.5nC @ 10V | 10V | ±20V |
