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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTA4151PT1H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-nta4151pt1g-datasheets-5315.pdf | SC-75, SOT-416 | Lead Free | 3 | 4 Weeks | 3 | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 3 | Single | 301mW | 1 | Other Transistors | 8 ns | 8.2ns | 20.4 ns | 29 ns | 760mA | 6V | SWITCHING | 20V | 20V | 301mW Tj | 0.76A | P-Channel | 156pF @ 5V | 360m Ω @ 350mA, 4.5V | 1.2V @ 250μA | 760mA Tj | 2.1nC @ 4.5V | 1.8V 4.5V | ±6V | |||||||||||||||||||||||||||||||||||||||||||
| IXTK5N250 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtx5n250-datasheets-4542.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2500V | 2500V | 960W Tc | 5A | 20A | 2500 mJ | N-Channel | 8560pF @ 25V | 8.8 Ω @ 2.5A, 10V | 5V @ 1mA | 5A Tc | 200nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT020N10N3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipt020n10n3atma1-datasheets-7156.pdf | 8-PowerSFN | 2.4mm | Contains Lead | 8 | 18 Weeks | 8 | EAR99 | ULTRA LOW RESISTANCE | PG-HSOF-8 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | FLAT | 260 | 1 | 40 | 375W | 1 | 175°C | 34 ns | 84 ns | 300A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 2V | 375W Tc | 0.02Ohm | 100V | N-Channel | 11200pF @ 50V | 2m Ω @ 150A, 10V | 3.5V @ 272μA | 300A Tc | 156nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTK170P10P | IXYS | $17.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixtx170p10p-datasheets-0670.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 890W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 170A | 20V | SILICON | DRAIN | SWITCHING | 100V | 890W Tc | 510A | 0.012Ohm | 3500 mJ | -100V | P-Channel | 12600pF @ 25V | 12m Ω @ 500mA, 10V | 4V @ 1mA | 170A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI2347DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2347dst1ge3-datasheets-7502.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 1.7W | 1 | Other Transistors | 150°C | 6ns | 9 ns | 19 ns | 5A | 20V | SILICON | SWITCHING | 30V | -2.5V | 1.7W Tc | 5A | 0.042Ohm | -30V | P-Channel | 705pF @ 15V | 42m Ω @ 3.8A, 10V | 2.5V @ 250μA | 5A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| PMV50EPEAR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmv50epear-datasheets-7458.pdf | TO-236-3, SC-59, SOT-23-3 | 4 Weeks | TO-236AB | 30V | 310mW Ta 455mW Tc | 35mOhm | P-Channel | 793pF @ 15V | 45mOhm @ 4.2A, 10V | 3V @ 250μA | 4.2A Ta | 19.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW20NM60 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp20nm60-datasheets-1689.pdf | 650V | 20A | TO-247-3 | 50.8mm | 6.35mm | 6.35mm | Lead Free | 3 | 16 Weeks | 4.535924g | No SVHC | 290mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STW20N | 3 | Single | 192W | 1 | FET General Purpose Power | 25 ns | 20ns | 11 ns | 42 ns | 20A | 30V | SILICON | SWITCHING | 4V | 192W Tc | 80A | 650 mJ | 600V | N-Channel | 1500pF @ 25V | 290m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| STE145N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Chassis Mount | Chassis Mount | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-ste145n65m5-datasheets-7377.pdf | ISOTOP | 12 Weeks | 12mOhm | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STE1 | Single | NOT SPECIFIED | 143A | 679W Tc | 650V | N-Channel | 18500pF @ 100V | 15m Ω @ 69A, 10V | 5V @ 250μA | 143A Tc | 414nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K7002CFU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/toshibasemiconductorandstorage-ssm3k7002cfulf-datasheets-7380.pdf | SC-70, SOT-323 | 3 | 12 Weeks | yes | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | 170mA | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 60V | 60V | 150mW Ta | 0.17A | 4.7Ohm | N-Channel | 17pF @ 10V | 3.9 Ω @ 100mA, 10V | 2.1V @ 250μA | 170mA Ta | 0.35nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN38N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfn38n100p-datasheets-7383.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 20 Weeks | 210MOhm | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 1kW | 1 | FET General Purpose Power | 55ns | 40 ns | 71 ns | 38A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 1000W Tc | 2000 mJ | 1kV | N-Channel | 24000pF @ 25V | 210m Ω @ 19A, 10V | 6.5V @ 1mA | 38A Tc | 350nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| RUE003N02TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/rohmsemiconductor-rue003n02tl-datasheets-7388.pdf | SC-75, SOT-416 | 1.6mm | 700μm | 800μm | Lead Free | 3 | 7 Weeks | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | Single | 150mW | 1 | FET General Purpose Power | 5 ns | 10ns | 10 ns | 15 ns | 300mA | 8V | SILICON | SWITCHING | 300mV | 150mW Ta | 1.4Ohm | 20V | N-Channel | 25pF @ 10V | 300 mV | 1 Ω @ 300mA, 4V | 1V @ 1mA | 300mA Ta | 1.8V 4V | ±8V | |||||||||||||||||||||||||||||||||||||||
| STW65N65DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw65n65dm2ag-datasheets-7393.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW65N | NOT SPECIFIED | 60A | 650V | 446W Tc | N-Channel | 5500pF @ 100V | 50m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 120nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN100N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfn100n50p-datasheets-7397.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | No SVHC | 49mOhm | 4 | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 1.04kW | 1 | 29ns | 26 ns | 110 ns | 90A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 5V | 1040W Tc | 250A | 5000 mJ | 500V | N-Channel | 20000pF @ 25V | 49m Ω @ 50A, 10V | 5V @ 8mA | 90A Tc | 240nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFB150N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfb150n65x2-datasheets-7399.pdf | TO-264-3, TO-264AA | 19 Weeks | 150A | 650V | 1560W Tc | N-Channel | 20400pF @ 25V | 17m Ω @ 75A, 10V | 5.5V @ 8mA | 150A Tc | 430nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH150N30X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfk150n30x3-datasheets-2094.pdf | TO-247-3 | 19 Weeks | 300V | 890W Tc | N-Channel | 13.1nF @ 25V | 8.3m Ω @ 75A, 10V | 4.5V @ 4mA | 150A Tc | 254nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17381F4 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-XFDFN | 1.035mm | 350μm | 635μm | Lead Free | 3 | 12 Weeks | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | ULTRA LOW RESISTANCE | 3-PICOSTAR | BOTTOM | NO LEAD | 260 | CSD17381 | Single | NOT SPECIFIED | 500mW | 1 | FET General Purpose Powers | 3.4 ns | 1.4ns | 3.6 ns | 10.8 ns | 3.1A | 12V | SILICON | DRAIN | SWITCHING | 500mW Ta | 0.25Ohm | 2.9 pF | 30V | N-Channel | 195pF @ 15V | 109m Ω @ 500mA, 8A | 1.1V @ 250μA | 3.1A Ta | 1.35nC @ 4.5V | 1.8V 4.5V | |||||||||||||||||||||||||||||||||||||||
| PMZB350UPE,315 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmzb350upe315-datasheets-7363.pdf | 3-XFDFN | Lead Free | 8 Weeks | 3 | No | e3 | Tin (Sn) | 3 | 4 ns | 5ns | 9 ns | 26 ns | 1A | 8V | -20V | 20V | 360mW Ta 3.125W Tc | P-Channel | 127pF @ 10V | 450m Ω @ 300mA, 4.5V | 950mV @ 250μA | 1A Ta | 1.9nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG2301L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg2301l13-datasheets-7449.pdf | TO-236-3, SC-59, SOT-23-3 | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3A | 20V | 1.5W Ta | P-Channel | 476pF @ 10V | 120m Ω @ 2.8A, 4.5V | 1.2V @ 250μA | 3A Ta | 5.5nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VMO1200-01F | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-vmo120001f-datasheets-7431.pdf | Y3-Li | Lead Free | 4 | yes | EAR99 | not_compliant | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-XUFM-X4 | 1.245kA | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 1220A | 0.00125Ohm | N-Channel | 1.35m Ω @ 932A, 10V | 4V @ 64mA | 1220A Tc | 2520nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R099C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r099c6xksa1-datasheets-1717.pdf | TO-220-3 | 20.7mm | Lead Free | 3 | 40 Weeks | 3 | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 1 | 278W | 1 | 150°C | 15 ns | 12ns | 6 ns | 75 ns | 37.9A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 278W Tc | TO-220AB | 0.099Ohm | 796 mJ | 600V | N-Channel | 2660pF @ 100V | 99m Ω @ 18.1A, 10V | 3.5V @ 1.21mA | 37.9A Tc | 119nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| 2N7000-D26Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-2n7002-datasheets-6168.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | 11 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | NO | BOTTOM | NOT SPECIFIED | 2N7000 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 400mW Ta | 0.2A | 5Ohm | 5 pF | N-Channel | 50pF @ 25V | 5 Ω @ 500mA, 10V | 3V @ 1mA | 200mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS314PEH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bss314peh6327xtsa1-datasheets-7444.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 10 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Halogen Free | DUAL | GULL WING | 3 | 500mW | 1 | 3.9ns | 1.5A | 20V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 500mW Ta | P-Channel | 294pF @ 15V | 140m Ω @ 1.5A, 10V | 2V @ 6.3μA | 1.5A Ta | 2.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K15F,LF | Toshiba Semiconductor and Storage | $0.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSIV | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3k15flf-datasheets-7374.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 30V | 200mW Ta | N-Channel | 7.8pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP45N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb45n65m5-datasheets-1527.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 78MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | STP45N | Single | 208W | 1 | FET General Purpose Powers | 79.5 ns | 79.5 ns | 35A | 25V | SILICON | DRAIN | SWITCHING | 4V | 210W Tc | TO-220AB | 140A | 810 mJ | 650V | N-Channel | 3375pF @ 100V | 4 V | 78m Ω @ 19.5A, 10V | 5V @ 250μA | 35A Tc | 91nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| IXFN82N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfn82n60p-datasheets-7317.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.07mm | Lead Free | 4 | 30 Weeks | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1.04kW | 1 | FET General Purpose Power | Not Qualified | 28 ns | 23ns | 24 ns | 79 ns | 72A | 30V | SILICON | ISOLATED | SWITCHING | 1040W Tc | 82A | 200A | 0.075Ohm | 5000 mJ | 600V | N-Channel | 23000pF @ 25V | 75m Ω @ 41A, 10V | 5V @ 8mA | 72A Tc | 240nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTA3N120-TRL | IXYS | $5.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n120-datasheets-9177.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 17 Weeks | 3A | 1200V | 200W Tc | N-Channel | 1350pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX90P20P | IXYS | $34.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtk90p20p-datasheets-2159.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 890W | 1 | Other Transistors | Not Qualified | 90A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 890W Tc | 270A | 0.044Ohm | P-Channel | 12000pF @ 25V | 44m Ω @ 22A, 10V | 4V @ 1mA | 90A Tc | 205nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFH40N30 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfh35n30-datasheets-7656.pdf | 300V | 40A | TO-247-3 | Lead Free | 3 | 8 Weeks | No SVHC | 85mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | 60ns | 45 ns | 75 ns | 40A | 20V | 300V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 200 ns | 300V | N-Channel | 4800pF @ 25V | 4 V | 85m Ω @ 500mA, 10V | 4V @ 4mA | 40A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SSM3K16FU,LF | Toshiba Semiconductor and Storage | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVI | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3k16fulf-datasheets-7326.pdf | SC-70, SOT-323 | 12 Weeks | unknown | 100mA | 20V | 150mW Ta | N-Channel | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 1.1V @ 100μA | 100mA Ta | 1.5V 4V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN210N30X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfn210n30x3-datasheets-7329.pdf | SOT-227-4, miniBLOC | 19 Weeks | compliant | 300V | 695W Tc | N-Channel | 24200pF @ 25V | 4.6m Ω @ 105A, 10V | 4.5V @ 8mA | 210A Tc | 375nC @ 10V | 10V | ±20V |
