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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP60NF06FP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp60nf06fp-datasheets-3265.pdf | 60V | 60A | TO-220-3 Full Pack | Lead Free | 3 | 16mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP60N | 3 | Single | 30W | 1 | FET General Purpose Power | 16 ns | 108ns | 20 ns | 43 ns | 30A | 20V | SILICON | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 60V | N-Channel | 1810pF @ 25V | 16m Ω @ 30A, 10V | 4V @ 250μA | 30A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPAN80R450P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipan80r450p7xksa1-datasheets-3269.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 29W Tc | TO-220AB | 29A | 0.45Ohm | 29 mJ | N-Channel | 770pF @ 500V | 450m Ω @ 4.5A, 10V | 3.5V @ 220μA | 11A Tc | 24nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI90N04S402AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb90n04s402atma1-datasheets-8150.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 16 Weeks | 3 | EAR99 | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 23 ns | 13ns | 26 ns | 27 ns | 90A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 150W Tc | 0.0025Ohm | 475 mJ | N-Channel | 9430pF @ 25V | 2.5m Ω @ 90A, 10V | 4V @ 95μA | 90A Tc | 118nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STP18NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw18nm60n-datasheets-1964.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 285mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP18N | 3 | Single | 110W | 1 | FET General Purpose Power | 12 ns | 15ns | 25 ns | 55 ns | 13A | 25V | SILICON | SWITCHING | 3V | 110W Tc | TO-220AB | 52A | 600V | N-Channel | 1000pF @ 50V | 285m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Tc | 35nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| STP13N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw13n60m2-datasheets-5232.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 16 Weeks | 380mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP13N | Single | 11 ns | 10ns | 9.5 ns | 41 ns | 11A | 25V | 600V | 110W Tc | N-Channel | 580pF @ 100V | 380m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 17nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA6N65E-E3 | Vishay Siliconix | $7.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha6n65ee3-datasheets-3221.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 650V | 31W Tc | N-Channel | 1640pF @ 100V | 600mOhm @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP4N80E-GE3 | Vishay Siliconix | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp4n80ege3-datasheets-3224.pdf | TO-220-3 | 18 Weeks | TO-220AB | 800V | 69W Tc | N-Channel | 622pF @ 100V | 1.27Ohm @ 2A, 10V | 4V @ 250μA | 4.3A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK6A80E,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVIII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | /files/toshibasemiconductorandstorage-tk6a80es4x-datasheets-3227.pdf | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 1 | Single | 55 ns | 20ns | 15 ns | 85 ns | 6A | 30V | 800V | 45W Tc | N-Channel | 1350pF @ 25V | 1.7 Ω @ 3A, 10V | 4V @ 600μA | 6A Ta | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF6N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfi6n80k5-datasheets-5457.pdf | TO-220-3 Full Pack | Lead Free | 17 Weeks | 329.988449mg | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | NOT SPECIFIED | STF6N | 1 | Single | NOT SPECIFIED | FET General Purpose Power | 16 ns | 7.5ns | 16 ns | 28.5 ns | 4.5A | 30V | 800V | 25W Tc | N-Channel | 270pF @ 100V | 1.6 Ω @ 2A, 10V | 5V @ 100μA | 4.5A Tc | 13nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF5N50FT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf5n50ft-datasheets-3149.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 28W | 1 | FET General Purpose Power | 13 ns | 22ns | 20 ns | 28 ns | 4.5A | 30V | SILICON | ISOLATED | SWITCHING | 28W Tc | TO-220AB | 500V | N-Channel | 700pF @ 25V | 1.55 Ω @ 2.25A, 10V | 5V @ 250μA | 4.5A Tc | 8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| AOT266L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | FET General Purpose Powers | 140A | Single | 60V | 2.1W Ta 268W Tc | N-Channel | 5650pF @ 30V | 3.5m Ω @ 20A, 10V | 3.2V @ 250μA | 18A Ta 140A Tc | 90nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP141NF55 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb141nf55-datasheets-1298.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 8mOhm | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP141 | 3 | Single | 300W | 1 | FET General Purpose Power | R-PSFM-T3 | 30 ns | 150ns | 45 ns | 125 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 320A | 1300 mJ | 55V | N-Channel | 5300pF @ 25V | 8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 142nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| RCX100N25 | ROHM Semiconductor | $1.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rcx100n25-datasheets-3168.pdf | TO-220-3 Full Pack | 3 | 16 Weeks | EAR99 | not_compliant | 8541.29.00.95 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 40W | 1 | R-PSFM-T3 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 40A | 0.32Ohm | 7.29 mJ | 250V | N-Channel | 10A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF820ASPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf820alpbf-datasheets-4820.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3Ohm | 3 | No | 1 | Single | 50W | 1 | D2PAK | 340pF | 8.1 ns | 12ns | 13 ns | 16 ns | 2.5A | 30V | 500V | 4.5V | 50W Tc | 3Ohm | N-Channel | 340pF @ 25V | 3Ohm @ 1.5A, 10V | 4.5V @ 250μA | 2.5A Tc | 17nC @ 10V | 3 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IPA60R380P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r380p6atma1-datasheets-8528.pdf | TO-220-3 Full Pack | Lead Free | 18 Weeks | 6.000006g | 3 | Halogen Free | 1 | PG-TO220-FP | 877pF | 12 ns | 6ns | 7 ns | 33 ns | 10.6A | 20V | 600V | 600V | 31W Tc | 342mOhm | N-Channel | 877pF @ 100V | 380mOhm @ 3.8A, 10V | 4.5V @ 320μA | 10.6A Tc | 19nC @ 10V | 380 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R360P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r360p7sxksa1-datasheets-8271.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 600V | 22W Tc | TO-220AB | 26A | 0.36Ohm | 27 mJ | N-Channel | 555pF @ 400V | 360m Ω @ 2.7A, 10V | 4V @ 140μA | 9A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB33N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfs33n15dpbf-datasheets-8950.pdf | 150V | 33A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Contains Lead, Lead Free | 3 | 14 Weeks | No SVHC | 56Ohm | 3 | EAR99 | No | Single | 3.8W | 1 | FET General Purpose Power | 13 ns | 38ns | 21 ns | 23 ns | 33A | 30V | 150V | SILICON | DRAIN | SWITCHING | 5.5V | 3.8W Ta 170W Tc | TO-220AB | 150V | N-Channel | 2020pF @ 25V | 5.5 V | 56m Ω @ 20A, 10V | 5.5V @ 250μA | 33A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IPA90R1K2C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa90r1k2c3xksa1-datasheets-3202.pdf | TO-220-3 Full Pack | 3 | 29 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 31W Tc | TO-220AB | 3.1A | 10A | 68 mJ | N-Channel | 710pF @ 100V | 1.2 Ω @ 2.8A, 10V | 3.5V @ 310μA | 5.1A Tc | 28nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STP130N8F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp130n8f7-datasheets-3214.pdf | TO-220-3 | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STP130 | NOT SPECIFIED | 80V | 205W Tc | N-Channel | 80A Tc | 4.5V 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R280P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipa60r280p7xksa1-datasheets-3217.pdf | TO-220-3 Full Pack | 20.7mm | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 24W | 1 | 150°C | R-PSFM-T3 | 17 ns | 60 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 24W Tc | TO-220AB | 36A | 0.28Ohm | 38 mJ | 600V | N-Channel | 761pF @ 400V | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 12A Tc | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STP7NK40ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp7nk40z-datasheets-2214.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | No | e3 | Matte Tin (Sn) | STP7N | 3 | Single | 25W | 1 | FET General Purpose Power | 15 ns | 15ns | 12 ns | 30 ns | 5.4A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 25W Tc | TO-220AB | 1Ohm | 400V | N-Channel | 535pF @ 25V | 1 Ω @ 2.7A, 10V | 4.5V @ 50μA | 5.4A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRFSL7437PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfs7437trlpbf-datasheets-9988.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 12 Weeks | No SVHC | 1.8MOhm | 3 | EAR99 | No | SINGLE | 230W | 1 | FET General Purpose Power | 19 ns | 70ns | 53 ns | 78 ns | 195A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 230W Tc | 802 mJ | 40V | N-Channel | 7330pF @ 25V | 3 V | 1.8m Ω @ 100A, 10V | 3.9V @ 150μA | 195A Tc | 225nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BUK7E3R1-40E,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk7e3r140e127-datasheets-3136.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 2.299997g | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | NO | 3 | 1 | Single | 1 | 24 ns | 29ns | 32 ns | 54 ns | 100A | 20V | 40V | SILICON | DRAIN | SWITCHING | 234W Tc | 798A | 40V | N-Channel | 6200pF @ 25V | 3.1m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 79nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIHB12N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihb12n60ege3-datasheets-3139.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 380MOhm | 3 | AVALANCHE RATED | No | GULL WING | 4 | 1 | Single | 147W | 1 | FET General Purpose Powers | R-PSSO-G2 | 14 ns | 38ns | 38 ns | 35 ns | 12A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 147W Tc | 27A | N-Channel | 937pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| CSD18510KTTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 10.18mm | 4.83mm | 8.41mm | 2 | 6 Weeks | 3 | ACTIVE (Last Updated: 4 days ago) | yes | 4.44mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | CSD18510 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 250W Ta | 200A | 400A | 0.0026Ohm | 551 pF | N-Channel | 11400pF @ 15V | 2.6m Ω @ 100A, 10V | 2.3V @ 250μA | 274A Tc | 132nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFBF20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfbf20-datasheets-7507.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 6.5Ohm | 3 | No | 1 | Single | 54W | 1 | TO-220AB | 490pF | 8 ns | 21ns | 32 ns | 56 ns | 1.7A | 20V | 900V | 4V | 54W Tc | 8Ohm | 900V | N-Channel | 490pF @ 25V | 4 V | 8Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 38nC @ 10V | 8 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| TSM80N08CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm80n08czc0g-datasheets-3087.pdf | TO-220-3 | 75V | 113.6W Tc | N-Channel | 3905pF @ 30V | 8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 91.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK12A50E,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk12a50es5x-datasheets-3090.pdf | TO-220-3 Full Pack | 16 Weeks | 500V | 45W Tc | N-Channel | 1300pF @ 25V | 520m Ω @ 6A, 10V | 4V @ 1.2mA | 12A Ta | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP3N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std3n80k5-datasheets-8152.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 329.988449mg | 3 | NRND (Last Updated: 7 months ago) | EAR99 | No | STP3N | 1 | Single | 1 | 8.5 ns | 7.5ns | 25 ns | 20.5 ns | 2.5A | 30V | SILICON | DRAIN | SWITCHING | 800V | 800V | 60W Tc | TO-220AB | 65 mJ | N-Channel | 130pF @ 100V | 3.5 Ω @ 1A, 10V | 5V @ 100μA | 2.5A Tc | 9.5nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHF8N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf8n50de3-datasheets-3095.pdf | TO-220-3 Full Pack | 10.63mm | 9.8mm | 4.83mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 33W | 1 | FET General Purpose Powers | 13 ns | 16ns | 11 ns | 17 ns | 8.7A | 30V | SILICON | ISOLATED | SWITCHING | 3V | 33W Tc | TO-220AB | 0.85Ohm | 29 mJ | 500V | N-Channel | 527pF @ 100V | 850m Ω @ 4A, 10V | 5V @ 250μA | 8.7A Tc | 30nC @ 10V | 10V | ±30V |
