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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDB12N50TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fdb12n50tm-datasheets-2555.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 9 Weeks | 1.31247g | 650MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 165W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25 ns | 60ns | 35 ns | 45 ns | 11.5A | 30V | SILICON | DRAIN | SWITCHING | 165W Tc | 46A | 456 mJ | 500V | N-Channel | 1315pF @ 25V | 650m Ω @ 6A, 10V | 5V @ 250μA | 11.5A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IPP041N04NGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp041n04ngxksa1-datasheets-2727.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 94W | 1 | FET General Purpose Power | 16 ns | 3.8ns | 4.8 ns | 23 ns | 80A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 94W Tc | TO-220AB | 400A | 60 mJ | N-Channel | 4500pF @ 20V | 4.1m Ω @ 80A, 10V | 4V @ 45μA | 80A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPA80R1K2P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa80r1k2p7xksa1-datasheets-2734.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 25W Tc | TO-220AB | 11A | 10 mJ | N-Channel | 300pF @ 500V | 1.2 Ω @ 1.7A, 10V | 3.5V @ 80μA | 4.5A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP0620N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tp0620n3g-datasheets-2737.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 5 Weeks | 219.992299mg | 12Ohm | 3 | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) | BOTTOM | WIRE | NOT APPLICABLE | 1 | Single | NOT APPLICABLE | 1W | 1 | Not Qualified | 10 ns | 15ns | 16 ns | 20 ns | -175mA | 20V | SILICON | SWITCHING | 200V | 1W Ta | -200V | P-Channel | 150pF @ 25V | 12 Ω @ 200mA, 10V | 2.4V @ 1mA | 175mA Tj | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STP9N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stu9n60m2-datasheets-7583.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 16 Weeks | 780mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP9N | Single | 60W | 8.8 ns | 7.5ns | 13.5 ns | 22 ns | 5.5A | 25V | 600V | 60W Tc | 650V | N-Channel | 320pF @ 100V | 780m Ω @ 3A, 10V | 4V @ 250μA | 5.5A Tc | 10nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STB8NM60T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std5nm601-datasheets-7777.pdf | 650V | 5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 17 Weeks | No SVHC | 1Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 245 | STB8N | 3 | Single | 30 | 100W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 10ns | 10 ns | 23 ns | 8A | 30V | SILICON | SWITCHING | 4V | 100W Tc | 8A | 200 mJ | 600V | N-Channel | 400pF @ 25V | 4 V | 1 Ω @ 2.5A, 10V | 5V @ 250μA | 8A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IPP126N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb123n10n3gatma1-datasheets-4205.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 94W | 1 | Not Qualified | 14 ns | 8ns | 5 ns | 24 ns | 58A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 94W Tc | TO-220AB | 70 mJ | N-Channel | 2500pF @ 50V | 12.3m Ω @ 46A, 10V | 3.5V @ 46μA | 58A Tc | 35nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FQP3N50C-F080 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fqp3n50cf080-datasheets-2676.pdf | TO-220-3 | 5 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | No | Single | 10 ns | 25ns | 25 ns | 35 ns | 3A | 30V | 500V | 62W Tc | N-Channel | 365pF @ 25V | 2.5 Ω @ 1.5A, 10V | 4V @ 250μA | 1.8A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR120PBF | Vishay Siliconix | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlr120trlpbf-datasheets-9045.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 8 Weeks | 1.437803g | 3 | Tin | No | 1 | Single | 2.5W | 1 | D-Pak | 490pF | 9.8 ns | 64ns | 27 ns | 21 ns | 7.7A | 10V | 100V | 2.5W Ta 42W Tc | 270mOhm | N-Channel | 490pF @ 25V | 270mOhm @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 12nC @ 5V | 270 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7787PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfsl7787pbf-datasheets-8283.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 12 Weeks | 6.000006g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 11 ns | 48ns | 39 ns | 51 ns | 76A | 20V | 75V | 125W Tc | N-Channel | 4020pF @ 25V | 8.4m Ω @ 46A, 10V | 3.7V @ 100μA | 76A Tc | 109nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP3N80C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqpf3n80c-datasheets-4313.pdf | 800V | 3A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 6 Weeks | 1.8g | No SVHC | 4.8Ohm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 107W | 1 | FET General Purpose Power | 15 ns | 43.5ns | 32 ns | 22.5 ns | 3A | 30V | 800V | SILICON | SWITCHING | 5V | 107W Tc | TO-220AB | 3A | 800V | N-Channel | 705pF @ 25V | 5 V | 4.8 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 16.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFB70N60Q2 | IXYS | $163.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfb70n60q2-datasheets-2615.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 8 Weeks | 264 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 26 ns | 25ns | 12 ns | 60 ns | 70A | 30V | SILICON | DRAIN | SWITCHING | 890W Tc | 280A | 0.088Ohm | 5 mJ | 600V | N-Channel | 12000pF @ 25V | 88m Ω @ 35A, 10V | 5.5V @ 8mA | 70A Tc | 265nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| PHP27NQ11T,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-php27nq11t127-datasheets-2617.pdf | TO-220-3 | 3 | 12 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | NO | 3 | Single | 107W | 1 | 12 ns | 43ns | 24 ns | 32 ns | 27.6A | 20V | 110V | SILICON | DRAIN | SWITCHING | 107W Tc | 112A | 0.05Ohm | 90 mJ | 110V | N-Channel | 1240pF @ 25V | 50m Ω @ 14A, 10V | 4V @ 1mA | 27.6A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| RCX051N25 | ROHM Semiconductor | $1.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | EAR99 | not_compliant | 8541.29.00.95 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 2.23W Ta 30W Tc | TO-220AB | 5A | 20A | 1.82 mJ | N-Channel | 350pF @ 25V | 1.36 Ω @ 2.5A, 10V | 5.5V @ 1mA | 5A Tc | 8.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STB85NF55T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb85nf55t4-datasheets-2574.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB85N | 4 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 100ns | 35 ns | 70 ns | 40A | 20V | 55V | SILICON | DRAIN | SWITCHING | 3V | 300W Tc | 0.008Ohm | 980 mJ | 55V | N-Channel | 3700pF @ 25V | 3 V | 8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| TSM4NB60CI C0G | Taiwan Semiconductor Corporation | $3.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack, Isolated Tab | 14 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 50W Tc | N-Channel | 500pF @ 25V | 2.5 Ω @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 14.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HTNFET-T | Honeywell Aerospace |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HTMOS™ | Through Hole | Through Hole | -55°C~225°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/honeywellaerospace-htnfetd-datasheets-4602.pdf | 4-SIP | 8 Weeks | 55V | 50W Tj | N-Channel | 290pF @ 28V | 400m Ω @ 100mA, 5V | 2.4V @ 100μA | 4.3nC @ 5V | 5V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R280CEXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa50r280ce-datasheets-1911.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 8 ns | 6.4ns | 7.6 ns | 40 ns | 7.5A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30.4W Tc | TO-220AB | 42.9A | 0.28Ohm | N-Channel | 773pF @ 100V | 280m Ω @ 4.2A, 13V | 3.5V @ 350μA | 7.5A Tc | 32.6nC @ 10V | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| R5007ANX | ROHM Semiconductor | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 Full Pack | Lead Free | 3 | yes | SINGLE | 260 | 3 | 10 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 40W Tc | TO-220AB | 7A | 28A | 3.5 mJ | N-Channel | 500pF @ 25V | 1.05 Ω @ 3.5A, 10V | 4.5V @ 1mA | 7A Ta | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD9220PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfd9220-datasheets-7306.pdf | -200V | -560mA | 4-DIP (0.300, 7.62mm) | 6.29mm | 3.37mm | 5mm | Lead Free | 8 Weeks | Unknown | 1.5Ohm | 4 | No | Single | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 340pF | 8.8 ns | 27ns | 19 ns | 7.3 ns | -560mA | 20V | 200V | -4V | 1W Ta | 1.5Ohm | 200V | P-Channel | 340pF @ 25V | 1.5Ohm @ 340mA, 10V | 4V @ 250μA | 560mA Ta | 15nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPSA70R600P7SAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipsa70r600p7sakma1-datasheets-2663.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 43.1W Tc | 20.5A | 0.6Ohm | N-Channel | 364pF @ 400V | 600m Ω @ 1.8A, 10V | 3.5V @ 90μA | 8.5A Tc | 10.5nC @ 400V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPAN70R750P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-ipan70r750p7sxksa1-datasheets-2666.pdf | TO-220-3 Full Pack | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 20.8W Tc | N-Channel | 306pF @ 400V | 750m Ω @ 1.4A, 10V | 3.5V @ 70μA | 6.5A Tc | 8.3nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2535N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tp2535n3g-datasheets-2607.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 5 Weeks | 453.59237mg | 25Ohm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | BOTTOM | NOT APPLICABLE | 1 | Single | NOT APPLICABLE | 740mW | 1 | Other Transistors | Not Qualified | 10 ns | 10ns | 10 ns | 20 ns | -86mA | 20V | SILICON | SWITCHING | 350V | 740mW Ta | 0.086A | 25 pF | -350V | P-Channel | 125pF @ 25V | 25 Ω @ 100mA, 10V | 2.4V @ 1mA | 86mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| APT8020JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8020jll-datasheets-2612.pdf | 800V | 33A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 16 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 1 | Single | 520W | 1 | FET General Purpose Power | 12 ns | 14ns | 10 ns | 39 ns | 33A | 30V | SILICON | ISOLATED | SWITCHING | 520W Tc | 0.2Ohm | 3000 mJ | 800V | N-Channel | 5200pF @ 25V | 200m Ω @ 16.5A, 10V | 5V @ 2.5mA | 33A Tc | 195nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFN55N50F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerRF™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/ixys-ixfn55n50f-datasheets-2540.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | No SVHC | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | Not Qualified | 20ns | 9.6 ns | 45 ns | 55A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600W Tc | 220A | 0.085Ohm | 3000 mJ | 500V | N-Channel | 6700pF @ 25V | 85m Ω @ 27.5A, 10V | 5.5V @ 8mA | 55A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| APT31M100L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt31m100b2-datasheets-4101.pdf | 1kV | 31A | TO-264-3, TO-264AA | Lead Free | 3 | 21 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | AVALANCHE RATED, HIGH RELIABILITY | e3 | PURE MATTE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1.04kW | 1 | Not Qualified | R-PSFM-T3 | 39 ns | 35ns | 33 ns | 130 ns | 32A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1040W Tc | 0.38Ohm | N-Channel | 8500pF @ 25V | 400m Ω @ 16A, 10V | 5V @ 2.5mA | 32A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| APT48M80L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt48m80b2-datasheets-0832.pdf | 800V | 48A | TO-264-3, TO-264AA | Lead Free | 3 | 29 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | FAST SWITCHING, AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1 | R-PSFM-T3 | 55 ns | 75ns | 70 ns | 230 ns | 49A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1135W Tc | 0.2Ohm | N-Channel | 9330pF @ 25V | 200m Ω @ 24A, 10V | 5V @ 2.5mA | 49A Tc | 305nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| APT50M38JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m38jll-datasheets-2547.pdf | 500V | 88A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 23 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 1 | Single | 694W | 1 | FET General Purpose Power | 17 ns | 22ns | 4 ns | 50 ns | 88A | 30V | SILICON | ISOLATED | SWITCHING | 694W Tc | 352A | 0.038Ohm | 3600 mJ | 500V | N-Channel | 12000pF @ 25V | 38m Ω @ 44A, 10V | 5V @ 5mA | 88A Tc | 270nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFK26N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixfk26n120p-datasheets-2550.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 960W | 1 | FET General Purpose Power | 56 ns | 55ns | 58 ns | 76 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 960W Tc | 60A | 0.46Ohm | 1.2kV | N-Channel | 16000pF @ 25V | 460m Ω @ 13A, 10V | 6.5V @ 1mA | 26A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| APT10045JLL | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-apt10045jll-datasheets-2552.pdf | 1kV | 21A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 19 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 460W | 1 | FET General Purpose Power | 10 ns | 5ns | 8 ns | 30 ns | 21A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 460W Tc | 2500 mJ | 1kV | N-Channel | 4350pF @ 25V | 450m Ω @ 11.5A, 10V | 5V @ 2.5mA | 21A Tc | 154nC @ 10V | 10V | ±30V |
