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ContactVishay Siliconix(12746)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SQM60N06-15_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sqm60n0615ge3-datasheets-0299.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 12 Weeks | 1.437803g | Unknown | 15mOhm | 3 | No | 1 | Single | 107W | 1 | TO-263 (D2Pak) | 2.48nF | 10 ns | 12ns | 10 ns | 20 ns | 56A | 20V | 60V | 2.5V | 107W Tc | 15mOhm | 60V | N-Channel | 2480pF @ 25V | 15mOhm @ 30A, 10V | 3.5V @ 250μA | 56A Tc | 50nC @ 10V | 15 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIA418DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia418djt1ge3-datasheets-1726.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 15 Weeks | 6 | EAR99 | No | 1 | Single | 12A | 2.4V | 3.5W Ta 19W Tc | 30V | N-Channel | 570pF @ 15V | 18m Ω @ 9A, 10V | 2.4V @ 250μA | 12A Tc | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR426DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir426dpt1ge3-datasheets-7218.pdf | PowerPAK® SO-8 | 1.12mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 12.5MOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 41.7W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 9 ns | 15ns | 10 ns | 18 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 4.8W Ta 41.7W Tc | 70A | 20 mJ | 40V | N-Channel | 1160pF @ 20V | 2.5 V | 10.5m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 31nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| SISS32DN-T1-GE3 | Vishay Siliconix | $1.30 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss32dnt1ge3-datasheets-7567.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 80V | 5W Ta 65.7W Tc | N-Channel | 1930pF @ 40V | 7.2mOhm @ 10A, 10V | 3.8V @ 250μA | 17.4A Ta 63A Tc | 42nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ886EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sqj886ept1ge3-datasheets-8691.pdf | PowerPAK® SO-8 | Lead Free | 4 | 12 Weeks | Unknown | 8 | EAR99 | No | SINGLE | GULL WING | 1 | 55W | 1 | R-PSSO-G4 | 8 ns | 17ns | 6 ns | 29 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 2V | 55W Tc | 240A | 0.0045Ohm | 64 mJ | 40V | N-Channel | 2922pF @ 20V | 4.5m Ω @ 15.3A, 10V | 2.5V @ 250μA | 60A Tc | 65nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SQD50034EL_GE3 | Vishay Siliconix | $1.36 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50034elge3-datasheets-8998.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252AA | 60V | 107W Tc | N-Channel | 6100pF @ 25V | 4mOhm @ 20A, 10V | 2.5V @ 250μA | 100A Tc | 90nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU5N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihu5n50dge3-datasheets-4568.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 20 Weeks | 329.988449mg | Unknown | 3 | No | 1 | Single | 104W | 1 | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | DRAIN | SWITCHING | 104W Tc | 28.8 mJ | 500V | N-Channel | 325pF @ 100V | 3 V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI8441DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8441dbt2e1-datasheets-0564.pdf | 6-UFBGA | 6 | 6 Weeks | 6 | yes | EAR99 | unknown | e3 | MATTE TIN | BOTTOM | BALL | 260 | 6 | 40 | 2.77W | 1 | Other Transistors | Not Qualified | 30ns | 10 ns | 35 ns | -10.5A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 2.77W Ta 13W Tc | 4.8A | 15A | 0.198Ohm | -20V | P-Channel | 600pF @ 10V | 80m Ω @ 1A, 4.5V | 700mV @ 250μA | 10.5A Tc | 13nC @ 5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||
| SQD50N04_4M5LT4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n044m5lge3-datasheets-4555.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 136W Tc | N-Channel | 5860pF @ 25V | 3.5mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 130nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP360LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp360lcpbf-datasheets-1347.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 200mOhm | 3 | No | 1 | Single | 280W | 1 | TO-247-3 | 3.4nF | 16 ns | 75ns | 50 ns | 42 ns | 23A | 30V | 400V | 4V | 280W Tc | 200mOhm | 400V | N-Channel | 3400pF @ 25V | 4 V | 200mOhm @ 14A, 10V | 4V @ 250μA | 23A Tc | 110nC @ 10V | 200 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRFZ10PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfz10pbf-datasheets-2535.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 200MOhm | 3 | yes | EAR99 | No | 3 | 1 | Single | 43W | 1 | 10 ns | 50ns | 19 ns | 13 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 4V | 43W Tc | TO-220AB | 40A | 47 mJ | N-Channel | 300pF @ 25V | 200m Ω @ 6A, 10V | 4V @ 250μA | 10A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF840STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-irf840spbf-datasheets-1527.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 11 Weeks | 1.437803g | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.3nF | 14 ns | 23ns | 20 ns | 49 ns | 8A | 20V | 500V | 125W Tc | 850mOhm | 500V | N-Channel | 1300pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 63nC @ 10V | 850 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHFR9310-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9310pbf-datasheets-8583.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | 3 | 18A | 400V | 50W | 1 | D-PAK (TO-252AA) | 1.8A | 20V | 400V | 50W Tc | P-Channel | 270pF @ 25V | 7Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHFR420A-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr420apbf-datasheets-7258.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252AA) | 500V | 83W Tc | N-Channel | 3400pF @ 25V | 3Ohm @ 1.5A, 10V | 4.5V @ 250μA | 3.3A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA810DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia810djt1ge3-datasheets-4651.pdf | PowerPAK® SC-70-6 Dual | 6 | 15 Weeks | 6 | EAR99 | No | 6 | 1 | FET General Purpose Power | 5 ns | 32ns | 53 ns | 30 ns | 4.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 1.9W Ta 6.5W Tc | 20A | 0.053Ohm | N-Channel | 400pF @ 10V | 53m Ω @ 3.7A, 4.5V | 1V @ 250μA | 4.5A Tc | 11.5nC @ 8V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHFR9014-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9014trpbf-datasheets-0184.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | D-PAK (TO-252AA) | 60V | 2.5W Ta 25W Tc | P-Channel | 270pF @ 25V | 500mOhm @ 3.1A, 10V | 4V @ 250μA | 5.1A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA96DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sira96dpt1ge3-datasheets-6758.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.6W | 150°C | 8 ns | 13 ns | 15A | 34.7W Tc | 30V | N-Channel | 1385pF @ 15V | 8.8m Ω @ 10A, 10V | 2.2V @ 250μA | 16A Tc | 15nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7454DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7454dpt1e3-datasheets-8932.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 33MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 16 ns | 10ns | 10 ns | 35 ns | 7.8A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.9W Ta | 5A | 30A | 100V | N-Channel | 34m Ω @ 7.8A, 10V | 4V @ 250μA | 5A Ta | 30nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
| SQM50N04-4M0L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm50n044m0lge3-datasheets-8705.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 40V | 150W Tc | N-Channel | 6100pF @ 25V | 4mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 130nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7455DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7455dpt1ge3-datasheets-9402.pdf | PowerPAK® SO-8 | 5 | 13 Weeks | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1 | Not Qualified | R-XDSO-C5 | 185ns | 65 ns | 70 ns | 28A | 20V | SILICON | DRAIN | SWITCHING | 80V | 5.2W Ta 83.3W Tc | 60A | 0.025Ohm | 101 mJ | -80V | P-Channel | 5160pF @ 40V | 25m Ω @ 10.5A, 10V | 4V @ 250μA | 28A Tc | 155nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SQJ412EP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj412ept2ge3-datasheets-0142.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 40V | 83W Tc | N-Channel | 5950pF @ 20V | 4.1mOhm @ 10.3A, 10V | 2.5V @ 250μA | 32A Tc | 120nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR638DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishay-sir638dpt1re3-datasheets-4627.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | S17-0173-Single | 1 | 6.25W | 150°C | PowerPAK® SO-8 | 20 ns | 52 ns | 62.8A | 40V | 104W Tc | 730μOhm | 40V | N-Channel | 10500pF @ 20V | 0.88mOhm @ 20A, 10V | 2.3V @ 250μA | 100A Tc | 204nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB8N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb8n50dge3-datasheets-1242.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | yes | No | SINGLE | GULL WING | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 16ns | 11 ns | 17 ns | 8.7A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 156W Tc | 18A | 0.85Ohm | 29 mJ | N-Channel | 527pF @ 100V | 850m Ω @ 4A, 10V | 5V @ 250μA | 8.7A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF9620STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf9620spbf-datasheets-8880.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 1.5Ohm | 3 | No | 1 | Single | D2PAK | 350pF | 15 ns | 25ns | 15 ns | 20 ns | -3.5A | 20V | 200V | 3W Ta 40W Tc | 1.5Ohm | -200V | P-Channel | 350pF @ 25V | 1.5Ohm @ 1.5A, 10V | 4V @ 250μA | 3.5A Tc | 22nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SQM120N06-06_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120n0606ge3-datasheets-2619.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 60V | 230W Tc | N-Channel | 6495pF @ 25V | 6mOhm @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP30N60AEL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp30n60aelge3-datasheets-3710.pdf | TO-220-3 | TO-220AB | 600V | 250W Tc | N-Channel | 2565pF @ 100V | 120mOhm @ 15A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD210 | Vishay Siliconix | $0.31 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd210pbf-datasheets-0562.pdf | 200V | 600mA | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Contains Lead | 4 | No | 1 | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 140pF | 8.2 ns | 17ns | 17 ns | 14 ns | 600mA | 20V | 200V | 1W Ta | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 1.5Ohm @ 360mA, 10V | 4V @ 250μA | 600mA Ta | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF840 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf840-datasheets-7243.pdf | 500V | 8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.3nF | 14 ns | 23ns | 20 ns | 49 ns | 8A | 20V | 500V | 125W Tc | 850mOhm | 500V | N-Channel | 1300pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 63nC @ 10V | 850 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF9Z34 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9z34pbf-datasheets-8721.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | 2.54mm | No | 1 | Single | 88W | 1 | TO-220AB | 1.1nF | 18 ns | 120ns | 58 ns | 20 ns | 18A | 20V | 60V | 88W Tc | 140mOhm | -60V | P-Channel | 1100pF @ 25V | 140mOhm @ 11A, 10V | 4V @ 250μA | 18A Tc | 34nC @ 10V | 140 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFBG20 | Vishay Siliconix | $0.45 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishay-irfbg20-datasheets-1405.pdf | 1kV | 1.4A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 54W | 1 | TO-220AB | 500pF | 9.4 ns | 17ns | 31 ns | 58 ns | 1.4A | 20V | 1000V | 54W Tc | 11Ohm | 1kV | N-Channel | 500pF @ 25V | 11Ohm @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 38nC @ 10V | 11 Ω | 10V | ±20V |
