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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK761R4-30E,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | YES | SINGLE | GULL WING | 3 | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 324W Tc | 120A | 1425A | 0.00145Ohm | 1096 mJ | N-Channel | 9580pF @ 25V | 1.45m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDFMA2P853T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdfma2p853t-datasheets-0651.pdf | 6-UDFN Exposed Pad | 6 | No | Single | 1.4W | 1 | 9 ns | 11ns | 11 ns | 15 ns | 3A | 8V | 1.4W Ta | 20V | P-Channel | 435pF @ 10V | 120m Ω @ 3A, 4.5V | 1.3V @ 250μA | 3A Ta | 6nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7110TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfh7110trpbf-datasheets-0666.pdf | 8-TQFN Exposed Pad | 5.85mm | 1.17mm | 5mm | 5 | 15 Weeks | No SVHC | 8 | EAR99 | No | DUAL | FLAT | Single | 3.6W | 1 | FET General Purpose Power | R-PDSO-F5 | 11 ns | 23ns | 18 ns | 22 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 100V | 3V | 3.6W Ta 104W Tc | 50A | 240A | N-Channel | 3240pF @ 25V | 3 V | 13.5m Ω @ 35A, 10V | 4V @ 100μA | 11A Ta 58A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| GA10JT12-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga10jt12247-datasheets-0691.pdf | TO-247-3 | 18 Weeks | No SVHC | 3 | EAR99 | NO | Other Transistors | 10A | N-CHANNEL | 1200V | 170W Tc | 140m Ω @ 10A | 10A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS8570S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdms8570s-datasheets-0694.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 5.85mm | Lead Free | 5 | 90mg | 8 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 3.3W | 1 | FET General Purpose Power | R-PDSO-F5 | 11 ns | 4ns | 3 ns | 33 ns | 28A | 12V | SILICON | DRAIN | SWITCHING | 2.5W Ta 48W Tc | MO-240AA | 60A | 45 mJ | 25V | N-Channel | 2825pF @ 13V | 2.8m Ω @ 24A, 10V | 2.2V @ 1mA | 24A Ta 60A Tc | 425nC @ 10V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||
| HUFA75321D3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-hufa75321d3s-datasheets-4857.pdf | 55V | 20A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 260.37mg | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | Single | 93W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 55ns | 66 ns | 47 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 93W Tc | TO-252AA | 55V | N-Channel | 680pF @ 25V | 36m Ω @ 20A, 10V | 4V @ 250μA | 20A Tc | 44nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AOC2415 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aoc2415-datasheets-0735.pdf | 4-SMD, No Lead | 3.5A | 20V | 550mW Ta | P-Channel | 1685pF @ 10V | 33m Ω @ 1.5A, 4.5V | 1V @ 250μA | 3.5A Ta | 28nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA34DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira34dpt1ge3-datasheets-0575.pdf | PowerPAK® SO-8 | 5 | 22 Weeks | 506.605978mg | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 3.3W | 1 | FET General Purpose Power | R-PDSO-C5 | 11 ns | 11ns | 6 ns | 19 ns | 40A | -16V | SILICON | DRAIN | SWITCHING | 3.3W Ta 31.25W Tc | 0.0067Ohm | 5 mJ | 30V | N-Channel | 1100pF @ 15V | 6.7m Ω @ 10A, 10V | 2.4V @ 250μA | 40A Tc | 25nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||
| FDB8445-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdb8445f085-datasheets-0327.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 1.31247g | 3 | LAST SHIPMENTS (Last Updated: 6 days ago) | yes | No | Single | 92W | 1 | FET General Purpose Power | 10 ns | 19ns | 16 ns | 36 ns | 70A | 20V | 92W Tc | 40V | N-Channel | 3805pF @ 25V | 9m Ω @ 70A, 10V | 4V @ 250μA | 70A Tc | 62nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC86106LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdmc86106lz-datasheets-0587.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | 8 | Gold | No | 19W | 1 | 8-MLP (3.3x3.3) | 310pF | 4.5 ns | 1.3ns | 1.4 ns | 10 ns | 7.5A | 20V | 100V | 2.3W Ta 19W Tc | 103mOhm | 100V | N-Channel | 310pF @ 50V | 103mOhm @ 3.3A, 10V | 2.2V @ 250μA | 3.3A Ta 7.5A Tc | 6nC @ 10V | 103 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4578 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 8 | FET General Purpose Power | 20A | Single | 30V | 3.1W Ta | N-Channel | 1128pF @ 15V | 5.7m Ω @ 20A, 10V | 2.2V @ 250μA | 20A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7665S2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf7665s2tr1pbf-datasheets-8778.pdf | DirectFET™ Isometric SB | 4.826mm | 508μm | 3.9624mm | 2 | 13 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | 30W | 1 | FET General Purpose Power | R-XBCC-N2 | 3.8 ns | 6.4ns | 3.6 ns | 7.1 ns | 14.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 2.4W Ta 30W Tc | 58A | 0.062Ohm | 100V | N-Channel | 515pF @ 25V | 4 V | 62m Ω @ 8.9A, 10V | 5V @ 25μA | 4.1A Ta 14.4A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FQB7N60TM-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | yes | not_compliant | YES | FET General Purpose Power | Single | 600V | 3.13W Ta 142W Tc | 7.4A | N-Channel | 1430pF @ 25V | 1 Ω @ 3.7A, 10V | 5V @ 250μA | 7.4A Tc | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD20AN06A0-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdd20an06a0-datasheets-8220.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 260.37mg | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 98ns | 33 ns | 23 ns | 45A | 20V | SILICON | DRAIN | SWITCHING | 90W Tc | TO-252AA | 8A | 0.02Ohm | 50 mJ | 60V | N-Channel | 950pF @ 25V | 20m Ω @ 45A, 10V | 4V @ 250μA | 8A Ta 45A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| AOD2C60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aod2c60-datasheets-0426.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 600V | 52W Tc | N-Channel | 304pF @ 100V | 3.3 Ω @ 500mA, 10V | 5V @ 250μA | 2A Tc | 10nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF11C60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | TO-262-3 Full Pack, I2Pak | TO-262F | 2nF | 11A | 600V | 28W Tc | N-Channel | 2000pF @ 100V | 400mOhm @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 42nC @ 10V | 400 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8441-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdb8441f085-datasheets-0363.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.31247g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 23 ns | 24ns | 17.9 ns | 75 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 28A | 0.0025Ohm | 947 mJ | 40V | N-Channel | 15000pF @ 25V | 2.5m Ω @ 80A, 10V | 4V @ 250μA | 28A Ta 80A Tc | 280nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AOI530 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | TO-251-3 Stub Leads, IPak | FET General Purpose Power | 70A | Single | 30V | 2.5W Ta 83W Tc | N-Channel | 3130pF @ 15V | 2.7m Ω @ 20A, 10V | 2.2V @ 250μA | 23A Ta 70A Tc | 62nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8870-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdb8870f085-datasheets-0260.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.31247g | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | 260 | Single | 30 | 160W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 98ns | 47 ns | 75 ns | 23A | 20V | SILICON | DRAIN | SWITCHING | 160W Tc | 160A | 0.0044Ohm | 30V | N-Channel | 5200pF @ 15V | 3.9m Ω @ 35A, 10V | 2.5V @ 250μA | 23A Ta 160A Tc | 132nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| AO4292 | Alpha & Omega Semiconductor Inc. | $0.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | 8 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 3.1W Ta | 8A | 0.023Ohm | N-Channel | 1190pF @ 50V | 23m Ω @ 8A, 10V | 2.7V @ 250μA | 8A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK14C65W5,S1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-262-3 Long Leads, I2Pak, TO-262AA | 12 Weeks | 2.387001g | 3 | No | 1 | Single | I2PAK | 1.3nF | 90 ns | 40ns | 7 ns | 110 ns | 13.7A | 30V | 650V | 130W Tc | 250mOhm | 650V | N-Channel | 1300pF @ 300V | 300mOhm @ 6.9A, 10V | 4.5V @ 690μA | 13.7A Ta | 40nC @ 10V | 300 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA05JT12-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2016 | TO-247-3 | 18 Weeks | No SVHC | 3 | EAR99 | NO | Other Transistors | 5A | N-CHANNEL | 1200V | 106W Tc | 280m Ω @ 5A | 5A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF10T60PL | Alpha & Omega Semiconductor Inc. | $20.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aotf7t60pl-datasheets-2991.pdf | TO-220-3 Full Pack | 16 Weeks | TO-220F | 1.595nF | 10A | 600V | 33W Tc | N-Channel | 1595pF @ 100V | 700mOhm @ 5A, 10V | 5V @ 250μA | 10A Tc | 40nC @ 10V | 700 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6725MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf6725mtr1pbf-datasheets-2498.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | 3 | 17 Weeks | No SVHC | 5 | EAR99 | No | BOTTOM | 100W | 1 | FET General Purpose Power | R-XBCC-N3 | 16 ns | 22ns | 13 ns | 19 ns | 170A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.8W Ta 100W Tc | 28A | 220A | 0.0022Ohm | 190 mJ | 30V | N-Channel | 4700pF @ 15V | 1.8 V | 2.2m Ω @ 28A, 10V | 2.35V @ 100μA | 28A Ta 170A Tc | 54nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDS6673BZ-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds6673bzf085-datasheets-0310.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | 8 | LIFETIME (Last Updated: 1 day ago) | yes | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 14 ns | 16ns | 105 ns | 225 ns | 14.5A | 25V | SILICON | SWITCHING | 30V | 2.5W Ta | 900 pF | -30V | P-Channel | 4700pF @ 25V | 7.8m Ω @ 14.5A, 10V | 3V @ 250μA | 14.5A Ta | 124nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| TK14C65W,S1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-262-3 Long Leads, I2Pak, TO-262AA | 12 Weeks | 2.387001g | 3 | No | 1 | Single | I2PAK | 1.3nF | 60 ns | 20ns | 7 ns | 110 ns | 13.7A | 30V | 650V | 130W Tc | 220mOhm | N-Channel | 1300pF @ 300V | 250mOhm @ 6.9A, 10V | 3.5V @ 690μA | 13.7A Ta | 35nC @ 10V | 250 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9840-55,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2015 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk984055cux-datasheets-7687.pdf | TO-261-4, TO-261AA | 4 | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1.8W Ta | 5A | 40A | 0.04Ohm | 60 mJ | N-Channel | 1400pF @ 25V | 40m Ω @ 5A, 5V | 2V @ 1mA | 5A Ta | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SUP50N10-21P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf830bpbf-datasheets-8569.pdf | TO-220-3 | Lead Free | 3 | 15 Weeks | 6.000006g | 21mOhm | yes | EAR99 | No | e3 | PURE MATTE TIN | 260 | 1 | Single | 30 | 1 | R-PSFM-T3 | 10 ns | 20ns | 14 ns | 22 ns | 50A | 20V | SILICON | SWITCHING | 3.1W Ta 125W Tc | TO-220AB | 60A | 80 mJ | 100V | N-Channel | 2055pF @ 50V | 21m Ω @ 10A, 10V | 4V @ 250μA | 50A Tc | 68nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| DMG6968LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-23-3 | 7.994566mg | 1.3W | 1 | 151pF | 6.5A | 20V | 36mOhm | N-Channel | 151pF @ 10V | 36mOhm @ 3.5A, 1.8V | 700mV @ 250μA | 6.5A Ta | 8.5nC @ 4.5V | 36 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7185TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-irfh7185trpbf-datasheets-0159.pdf | 8-PowerTDFN | 6.15mm | 950μm | 5.15mm | Lead Free | 5 | 16 Weeks | No SVHC | 8 | EAR99 | No | DUAL | IRFH7185 | 1 | Single | 3.6W | 1 | 150°C | R-PDSO-N5 | 6.5 ns | 9.9ns | 3.9 ns | 14 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 3.6V | 3.6W Ta 160W Tc | 260A | 0.0052Ohm | 360 mJ | 100V | N-Channel | 2320pF @ 50V | 5.2m Ω @ 50A, 10V | 3.6V @ 150μA | 19A Ta | 54nC @ 10V | 10V | ±20V |
