Products
Manufacturer
RFQ
Nwes
ContactIXYS(5222)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXFP24N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfa24n60x-datasheets-0324.pdf | TO-220-3 | 19 Weeks | 24A | 600V | 400W Tc | N-Channel | 1910pF @ 25V | 175m Ω @ 12A, 10V | 4.5V @ 2.5mA | 24A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK90N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfx90n60x-datasheets-4513.pdf | TO-264-3, TO-264AA | 19 Weeks | 90A | 600V | 1100W Tc | N-Channel | 8500pF @ 25V | 38m Ω @ 45A, 10V | 4.5V @ 8mA | 90A Tc | 210nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH12N90 | IXYS | $1.01 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n90-datasheets-4489.pdf | 900V | 12A | TO-247-3 | Lead Free | 3 | 900mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 12ns | 18 ns | 51 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 48A | 900V | N-Channel | 4200pF @ 25V | 900m Ω @ 6A, 10V | 4.5V @ 4mA | 12A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFH44N50Q3 | IXYS | $16.78 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh44n50q3-datasheets-0657.pdf | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | 3 | 20 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 830W | 1 | FET General Purpose Power | 30 ns | 250ns | 37 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 0.14Ohm | 1500 mJ | 500V | N-Channel | 4800pF @ 25V | 140m Ω @ 22A, 10V | 6.5V @ 4mA | 44A Tc | 93nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTD5N100A | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | Die | 5 | UPPER | NO LEAD | 1 | Not Qualified | R-XUUC-N5 | 5A | SILICON | SINGLE | 1000V | 1000V | 2Ohm | N-Channel | 5A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT70N30Q3 | IXYS | $46.30 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | EAR99 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 830W | 1 | FET General Purpose Power | R-PSSO-G2 | 33 ns | 250ns | 38 ns | 70A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 210A | 0.054Ohm | 1500 mJ | 300V | N-Channel | 4735pF @ 25V | 54m Ω @ 35A, 10V | 6.5V @ 4mA | 70A Tc | 98nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXKH47N60C | IXYS | $0.68 |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkh47n60c-datasheets-0779.pdf | TO-247-3 | Lead Free | 3 | 61 Weeks | 70MOhm | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 290W | 1 | FET General Purpose Power | R-PSFM-T3 | 27ns | 10 ns | 111 ns | 47A | 20V | SILICON | DRAIN | SWITCHING | TO-247AD | 600V | N-Channel | 70m Ω @ 30A, 10V | 4V @ 2mA | 47A Tc | 650nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTT140N075L2HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | compliant | 75V | 540W Tc | N-Channel | 9300pF @ 25V | 11m Ω @ 70A, 10V | 4.5V @ 250μA | 140A Tc | 275nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX32N90P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n90p-datasheets-0702.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900V | 900V | 960W Tc | 80A | 0.3Ohm | 2000 mJ | N-Channel | 10600pF @ 25V | 300m Ω @ 16A, 10V | 6.5V @ 1mA | 32A Tc | 215nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFN80N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn80n60p3-datasheets-0905.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | Lead Free | 4 | 30 Weeks | 4 | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | Single | 960W | 1 | FET General Purpose Power | 48 ns | 87 ns | 66A | 30V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 960W Tc | 200A | 0.07Ohm | 2000 mJ | N-Channel | 13100pF @ 25V | 70m Ω @ 40A, 10V | 5V @ 8mA | 66A Tc | 190nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| IXTR120P20T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtr120p20t-datasheets-0935.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED, UL RECOGNIZED | SINGLE | 3 | 1 | Other Transistors | R-PSIP-T3 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 595W Tc | 400A | 0.032Ohm | 3000 mJ | P-Channel | 73000pF @ 25V | 32m Ω @ 60A, 10V | 4.5V @ 250μA | 90A Tc | 740nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||
| IXFX30N110P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx30n110p-datasheets-0978.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | 48ns | 52 ns | 83 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 1100V | 960W Tc | 75A | 1500 mJ | 1.1kV | N-Channel | 13600pF @ 25V | 360m Ω @ 15A, 10V | 6.5V @ 1mA | 30A Tc | 235nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXFL80N50Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfl80n50q2-datasheets-1017.pdf | ISOPLUS264™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 380W | 1 | FET General Purpose Power | Not Qualified | 25ns | 11 ns | 60 ns | 64A | 30V | SILICON | ISOLATED | SWITCHING | 625W Tc | 55A | 0.066Ohm | 5000 mJ | 500V | N-Channel | 10500pF @ 25V | 66m Ω @ 40A, 10V | 5V @ 8mA | 55A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| MKE38RK600DFEL-TUB | IXYS |
Min: 1 Mult: 1 |
download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-mke38rk600dfeltrr-datasheets-1018.pdf | 9-SMD Module | 600V | N-Channel | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.5V @ 3mA | 50A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFZ520N075T2 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfz520n075t2-datasheets-1082.pdf | DE475 | 6 | 26 Weeks | 475 | yes | EAR99 | AVALANCHE RATED | DUAL | FLAT | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDFP-F6 | 465A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | 75V | 600W Tc | 1560A | 0.0013Ohm | 3000 mJ | N-Channel | 41000pF @ 25V | 1.3m Ω @ 100A, 10V | 4V @ 8mA | 465A Tc | 545nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| MMIX1F180N25T | IXYS | $38.20 |
Min: 1 Mult: 1 |
download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-mmix1f180n25t-datasheets-1119.pdf | 24-PowerSMD, 21 Leads | 25.25mm | 5.7mm | 23.25mm | 21 | 30 Weeks | 24 | EAR99 | AVALANCHE RATED | DUAL | GULL WING | 21 | Single | 1 | FET General Purpose Power | R-PDSO-G21 | 35 ns | 88 ns | 132A | 30V | SILICON | ISOLATED | SWITCHING | 250V | 250V | 570W Tc | 130A | 500A | 0.013Ohm | 3000 mJ | N-Channel | 23800pF @ 25V | 13m Ω @ 90A, 10V | 5V @ 8mA | 132A Tc | 364nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXTN17N120L | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtn17n120l-datasheets-1163.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 24 Weeks | 900MOhm | 4 | yes | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 540W | 1 | FET General Purpose Power | Not Qualified | 31ns | 83 ns | 110 ns | 15A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 1200V | 540W Tc | 17A | 30A | 1500 mJ | 1.2kV | N-Channel | 8300pF @ 25V | 900m Ω @ 8.5A, 20V | 5V @ 250μA | 15A Tc | 155nC @ 15V | 20V | ±30V | ||||||||||||||||||||||||
| IXTP8N65X2M | IXYS | $2.92 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtp8n65x2m-datasheets-1333.pdf | TO-220-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 4A | 650V | 32W Tc | N-Channel | 800pF @ 25V | 550m Ω @ 4A, 10V | 5V @ 250μA | 4A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTA05N100-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1000V | 40W Tc | N-Channel | 260pF @ 25V | 17 Ω @ 375mA, 10V | 4.5V @ 250μA | 750mA Tc | 7.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1N80 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n80-datasheets-1682.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 40W | 1 | Not Qualified | R-PSSO-G2 | 19ns | 28 ns | 40 ns | 750mA | 20V | SILICON | DRAIN | SWITCHING | 40W Tc | TO-252AA | 0.75A | 3A | 100 mJ | 800V | N-Channel | 220pF @ 25V | 11 Ω @ 500mA, 10V | 4.5V @ 25μA | 750mA Tc | 8.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFP4N100P | IXYS | $15.55 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfp4n100p-datasheets-2051.pdf | TO-220-3 | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | 4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 150W Tc | TO-220AB | 4A | 8A | 200 mJ | N-Channel | 1456pF @ 25V | 3.3 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 26nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFP12N65X2M | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp12n65x2m-datasheets-2173.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | 650V | 40W Tc | N-Channel | 1134pF @ 25V | 310m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 18.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA36N20T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 36A | 200V | N-Channel | 36A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA10P15T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 3 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 83W Ta | 10A | 30A | 0.35Ohm | 200 mJ | P-Channel | 2210pF @ 25V | 350m Ω @ 5A, 10V | 4.5V @ 250μA | 10A Tc | 36nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||
| IXTA48P05T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixty48p05t-datasheets-2147.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | GULL WING | 3 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 48A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 150W Tc | 150A | 0.03Ohm | 300 mJ | P-Channel | 3660pF @ 25V | 30m Ω @ 24A, 10V | 4.5V @ 250μA | 48A Tc | 53nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||
| IXTA380N036T4-7-TR | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-7, D2Pak (6 Leads + Tab) | 24 Weeks | 36V | 480W Tc | N-Channel | 13400pF @ 25V | 1m Ω @ 100A, 10V | 4V @ 250μA | 380A Tc | 260nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA2N100P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1000V | 86W Tc | N-Channel | 655pF @ 25V | 7.5 Ω @ 1A, 10V | 4.5V @ 100μA | 2A Tc | 24.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA90N055T2 | IXYS | $2.34 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp90n055t2-datasheets-3301.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 21ns | 19 ns | 39 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 150W Tc | 230A | 0.0084Ohm | 300 mJ | 55V | N-Channel | 2770pF @ 25V | 8.4m Ω @ 25A, 10V | 4V @ 250μA | 90A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| IXTP05N100P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp05n100p-datasheets-4475.pdf | TO-220-3 | 3 | 24 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 500mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 50W Tc | TO-220AB | 0.5A | 1.25A | 50 mJ | N-Channel | 196pF @ 25V | 30 Ω @ 250mA, 10V | 4V @ 50μA | 500mA Tc | 8.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTY1N80P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 800V | 42W Tc | N-Channel | 250pF @ 25V | 14 Ω @ 500mA, 10V | 4V @ 50μA | 1A Tc | 9nC @ 10V | 10V | ±30V |
