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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Evaluation Kit | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Isolation Voltage | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Function | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFV30N60P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n60p-datasheets-3966.pdf | 600V | 30A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 80A | 0.24Ohm | 1500 mJ | 600V | N-Channel | 4000pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 82nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFV52N30PS | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n30p-datasheets-7139.pdf | PLUS-220SMD | Lead Free | 2 | 3 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 22ns | 20 ns | 60 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 150A | 0.066Ohm | 1000 mJ | 300V | N-Channel | 3490pF @ 25V | 66m Ω @ 500mA, 10V | 5V @ 4mA | 52A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTA152N085T7 | IXYS | $2.44 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta152n085t7-datasheets-7458.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSFM-G6 | 50ns | 45 ns | 50 ns | 152A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 360W Tc | 410A | 0.007Ohm | 750 mJ | 85V | N-Channel | 5500pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 250μA | 152A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTA200N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta200n085t-datasheets-7501.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G2 | 80ns | 64 ns | 65 ns | 200A | SILICON | DRAIN | SWITCHING | 480W Tc | 540A | 0.005Ohm | 1000 mJ | 85V | N-Channel | 7600pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTC230N085T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtc230n085t-datasheets-7537.pdf | ISOPLUS220™ | 3 | 160W | Single | 160W | 120A | 5.3mOhm | 85V | N-Channel | 120A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH182N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth182n055t-datasheets-7569.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSFM-T3 | 35ns | 38 ns | 53 ns | 182A | SILICON | DRAIN | SWITCHING | 360W Tc | TO-247AD | 490A | 0.005Ohm | 1000 mJ | 55V | N-Channel | 4850pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 182A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTQ182N055T | IXYS | $15.94 |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth182n055t-datasheets-7569.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 35ns | 38 ns | 53 ns | 182A | SILICON | DRAIN | SWITCHING | 360W Tc | 490A | 0.005Ohm | 1000 mJ | 55V | N-Channel | 4850pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 182A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTV230N085T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtv230n085t-datasheets-7645.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | Not Qualified | 49ns | 39 ns | 56 ns | 230A | SILICON | DRAIN | SWITCHING | 550W Tc | 520A | 0.0044Ohm | 1000 mJ | 85V | N-Channel | 9900pF @ 25V | 4.4m Ω @ 50A, 10V | 4V @ 250μA | 230A Tc | 187nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTQ240N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth240n055t-datasheets-7605.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 54ns | 75 ns | 63 ns | 240A | SILICON | DRAIN | SWITCHING | 480W Tc | 650A | 1000 mJ | 55V | N-Channel | 7600pF @ 25V | 3.6m Ω @ 25A, 10V | 4V @ 250μA | 240A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTQ250N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth250n075t-datasheets-7601.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | Not Qualified | 50ns | 45 ns | 58 ns | 250A | SILICON | DRAIN | SWITCHING | 550W Tc | 560A | 0.004Ohm | 1500 mJ | 75V | N-Channel | 9900pF @ 25V | 4m Ω @ 50A, 10V | 4V @ 250μA | 250A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTH13N110 | IXYS |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth13n110-datasheets-5222.pdf | 1.1kV | 13A | TO-247-3 | Lead Free | 3 | 8 Weeks | 920mOhm | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 21ns | 36 ns | 80 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 1100V | 360W Tc | TO-247AD | 52A | 1.1kV | N-Channel | 5650pF @ 25V | 920m Ω @ 500mA, 10V | 4.5V @ 250μA | 13A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFH80N20Q | IXYS | $2.28 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n20q-datasheets-5589.pdf | 200V | 80A | TO-247-3 | Lead Free | 3 | 8 Weeks | 28MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 360W | 1 | FET General Purpose Power | 50ns | 20 ns | 75 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 200V | N-Channel | 4600pF @ 25V | 28m Ω @ 500mA, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFC24N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfc26n50-datasheets-8452.pdf | ISOPLUS220™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | 33ns | 30 ns | 65 ns | 21A | 20V | SILICON | ISOLATED | SWITCHING | 230W Tc | 84A | 500V | N-Channel | 4200pF @ 25V | 230m Ω @ 12A, 10V | 4V @ 4mA | 21A Tc | 135nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFK48N55 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk48n55-datasheets-8541.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 48A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 550V | 550V | 560W Tc | 192A | 0.11Ohm | N-Channel | 8900pF @ 25V | 110m Ω @ 24A, 10V | 4.5V @ 8mA | 48A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFK60N25Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft60n25q-datasheets-7464.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 60ns | 25 ns | 80 ns | 60A | 20V | SILICON | DRAIN | 360W Tc | 240A | 0.047Ohm | 1500 mJ | 250V | N-Channel | 5100pF @ 25V | 47m Ω @ 500mA, 10V | 4V @ 4mA | 60A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFN80N48 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn80n48-datasheets-8672.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 70ns | 27 ns | 102 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700W Tc | 320A | 6000 mJ | 480V | N-Channel | 9890pF @ 25V | 45m Ω @ 500mA, 10V | 4V @ 8mA | 80A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTA54N30T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 54A | 300V | N-Channel | 54A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXUC200N055 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixuc200n055-datasheets-8753.pdf | ISOPLUS220™ | 3 | No SVHC | 220 | yes | EAR99 | e3 | Matte Tin (Sn) | 260 | 3 | Single | 35 | 300W | 1 | Not Qualified | R-PSIP-T3 | 2.5kV | 115ns | 155 ns | 230 ns | 200A | 20V | SILICON | ISOLATED | SWITCHING | 4V | 300W Tc | 0.0051Ohm | 500 mJ | 55V | N-Channel | 5.1m Ω @ 100A, 10V | 4V @ 2mA | 200A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFP264 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-irfp264-datasheets-9257.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | No | 3 | Single | 280W | 1 | FET General Purpose Power | 99ns | 92 ns | 110 ns | 38A | 20V | SILICON | DRAIN | SWITCHING | 280W Tc | TO-247AD | 0.075Ohm | 250V | N-Channel | 4800pF @ 25V | 75m Ω @ 23A, 10V | 4V @ 250μA | 38A Tc | 210nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFV52N30P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n30p-datasheets-7139.pdf | TO-220-3, Short Tab | Lead Free | 3 | 66MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 20 ns | 60 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 150A | 1000 mJ | 300V | N-Channel | 3490pF @ 25V | 66m Ω @ 500mA, 10V | 5V @ 4mA | 52A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| FDM100-0045SP | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-fdm1000045sp-datasheets-4322.pdf | i4-Pac™-5 | 5 | 5 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | SINGLE | 260 | 5 | 35 | 1 | Not Qualified | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | 0.0072Ohm | N-Channel | 7.2m Ω @ 80A, 10V | 4V @ 1mA | 100A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFN66N50Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfn66n50q2-datasheets-4366.pdf | SOT-227-4, miniBLOC | 4 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | R-XUFM-X4 | 16ns | 12 ns | 60 ns | 66A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 735W Tc | 264A | 0.08Ohm | 4000 mJ | 500V | N-Channel | 6800pF @ 25V | 80m Ω @ 500mA, 10V | 4.5V @ 8mA | 66A Tc | 199nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFN90N30 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/ixys-ixfn90n30-datasheets-4509.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 33MOhm | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 560W | 1 | Not Qualified | 55ns | 40 ns | 100 ns | 90A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 560W Tc | 360A | 3000 mJ | 300V | N-Channel | 10000pF @ 25V | 33m Ω @ 45A, 10V | 4V @ 8mA | 90A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTT12N140 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtt12n140-datasheets-8289.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 150°C | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1400V | 1400V | 890W Tc | 40A | 2Ohm | 750 mJ | N-Channel | 3720pF @ 25V | 2 Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 106nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFH32N48Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-247-3 | 480V | 360W Tc | N-Channel | 5200pF @ 25V | 130m Ω @ 15A, 10V | 4V @ 4mA | 32A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT74N20Q | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/ixys-ixft74n20q-datasheets-3300.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX24N100F | IXYS | $14.42 |
Min: 1 Mult: 1 |
download | HiPerRF™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfk24n100f-datasheets-3062.pdf | TO-247-3 | 3 | 10 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | Not Qualified | R-PSIP-T3 | 18ns | 11 ns | 52 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 560W Tc | 96A | 0.0039Ohm | 3000 mJ | 1kV | N-Channel | 6600pF @ 25V | 390m Ω @ 12A, 10V | 5.5V @ 8mA | 24A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFM42N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh50n20-datasheets-1852.pdf | TO-204AE | 2 | yes | EAR99 | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 300W Tc | 42A | 168A | 0.06Ohm | N-Channel | 4400pF @ 25V | 60m Ω @ 21A, 10V | 4V @ 4mA | 42A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTM35N30 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-204AE | 2 | EAR99 | NO | BOTTOM | PIN/PEG | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 300W Tc | 35A | 0.1Ohm | N-Channel | 4600pF @ 25V | 100m Ω @ 17.5A, 10V | 4V @ 250μA | 35A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| EVDD430MCI | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-evdd430ci-datasheets-5891.pdf | Yes | FET Driver (External FET) | IXDD430MCI | Board(s) |
