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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFT80N65X2HV | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixft80n65x2hv-datasheets-4361.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | compliant | 650V | 890W Tc | N-Channel | 8300pF @ 25V | 5V @ 4mA | 80A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT94N30P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh94n30p3-datasheets-3561.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 23 ns | 49 ns | 94A | 20V | SILICON | DRAIN | SWITCHING | 300V | 1040W Tc | 2500 mJ | N-Channel | 5510pF @ 25V | 36m Ω @ 47A, 10V | 5V @ 4mA | 94A Tc | 102nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFT30N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixft30n50-datasheets-4425.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 42ns | 26 ns | 110 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 120A | 0.15Ohm | 1500 mJ | 500V | N-Channel | 5700pF @ 25V | 160m Ω @ 15A, 10V | 4V @ 4mA | 30A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFN36N110P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn36n110p-datasheets-4465.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1kW | 1 | FET General Purpose Power | Not Qualified | 54ns | 45 ns | 94 ns | 36A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1100V | 1000W Tc | 110A | 2000 mJ | 1.1kV | N-Channel | 23000pF @ 25V | 240m Ω @ 500mA, 10V | 6.5V @ 1mA | 36A Tc | 350nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFR180N15P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr180n15p-datasheets-4534.pdf | ISOPLUS247™ | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 2.5kV | 32ns | 36 ns | 150 ns | 100A | 20V | SILICON | ISOLATED | SWITCHING | 5V | 300W Tc | 4000 mJ | 150V | N-Channel | 7000pF @ 25V | 13m Ω @ 90A, 10V | 5V @ 4mA | 100A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFH10N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n100-datasheets-2166.pdf | 1kV | 10A | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 33ns | 32 ns | 62 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 300W Tc | TO-247AD | 40A | 1kV | N-Channel | 4000pF @ 25V | 1.2 Ω @ 5A, 10V | 4.5V @ 4mA | 10A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTA10N60P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta10n60p-datasheets-9382.pdf | 600V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 65 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | 30A | 0.74Ohm | 500 mJ | 600V | N-Channel | 1610pF @ 25V | 740m Ω @ 5A, 10V | 5.5V @ 250μA | 10A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXTA130N10T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta130n10t7-datasheets-9476.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | 24 Weeks | yes | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 47ns | 28 ns | 44 ns | 130A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 350A | 0.0091Ohm | 400 mJ | 100V | N-Channel | 5080pF @ 25V | 9.1m Ω @ 25A, 10V | 4.5V @ 250μA | 130A Tc | 104nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXTQ60N20T | IXYS | $2.59 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtq60n20t-datasheets-2657.pdf | TO-3P-3, SC-65-3 | 3 | 26 Weeks | EAR99 | AVALANCHE RATED | NO | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 500W Ta | 60A | 150A | 0.04Ohm | 700 mJ | N-Channel | 4530pF @ 25V | 40m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTU06N120P | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 600mA | 1200V | N-Channel | 600mA Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH270N04T4 | IXYS | $2.77 |
Min: 1 Mult: 1 |
download | TrenchT4™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixth270n04t4-datasheets-0011.pdf | TO-247-3 | 28 Weeks | 270A | 40V | 375W Tc | N-Channel | 9140pF @ 25V | 2.4m Ω @ 50A, 10V | 4V @ 250μA | 270A Tc | 182nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP60N20T | IXYS |
Min: 1 Mult: 1 |
download | Trench™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta60n20t-datasheets-0055.pdf | TO-220-3 | 3 | 26 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | 3 | 500W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500W Tc | TO-220AB | 150A | 0.04Ohm | 700 mJ | 200V | N-Channel | 4530pF @ 25V | 40m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFA5N100P | IXYS | $7.16 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfp5n100p-datasheets-0151.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 250W Tc | 5A | 10A | 300 mJ | N-Channel | 1830pF @ 25V | 2.8 Ω @ 2.5A, 10V | 6V @ 250μA | 5A Tc | 33.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTQ86N20T | IXYS | $12.11 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp86n20t-datasheets-0035.pdf | TO-3P-3, SC-65-3 | 3 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 86A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 480W Tc | 260A | 0.029Ohm | 1000 mJ | N-Channel | 4500pF @ 25V | 29m Ω @ 500mA, 10V | 5V @ 1mA | 86A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTP2R4N120P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta2r4n120p-datasheets-6875.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 25ns | 32 ns | 70 ns | 2.4A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 125W Tc | TO-220AB | 6A | 200 mJ | 1.2kV | N-Channel | 1207pF @ 25V | 7.5 Ω @ 500mA, 10V | 4.5V @ 250μA | 2.4A Tc | 37nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFA3N120-TRL | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfa3n120-datasheets-5453.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 3A | 1200V | 200W Tc | N-Channel | 1050pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 1.5mA | 3A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA230N075T2-7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta230n075t27-datasheets-0484.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 230A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 480W Tc | 700A | 0.0042Ohm | 850 mJ | N-Channel | 10500pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 250μA | 230A Tc | 178nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFP24N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfa24n60x-datasheets-0324.pdf | TO-220-3 | 19 Weeks | 24A | 600V | 400W Tc | N-Channel | 1910pF @ 25V | 175m Ω @ 12A, 10V | 4.5V @ 2.5mA | 24A Tc | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK90N60X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfx90n60x-datasheets-4513.pdf | TO-264-3, TO-264AA | 19 Weeks | 90A | 600V | 1100W Tc | N-Channel | 8500pF @ 25V | 38m Ω @ 45A, 10V | 4.5V @ 8mA | 90A Tc | 210nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH12N90 | IXYS | $1.01 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh13n90-datasheets-4489.pdf | 900V | 12A | TO-247-3 | Lead Free | 3 | 900mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 12ns | 18 ns | 51 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 48A | 900V | N-Channel | 4200pF @ 25V | 900m Ω @ 6A, 10V | 4.5V @ 4mA | 12A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFH44N50Q3 | IXYS | $16.78 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh44n50q3-datasheets-0657.pdf | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | 3 | 20 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 830W | 1 | FET General Purpose Power | 30 ns | 250ns | 37 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 0.14Ohm | 1500 mJ | 500V | N-Channel | 4800pF @ 25V | 140m Ω @ 22A, 10V | 6.5V @ 4mA | 44A Tc | 93nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTD5N100A | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | Die | 5 | UPPER | NO LEAD | 1 | Not Qualified | R-XUUC-N5 | 5A | SILICON | SINGLE | 1000V | 1000V | 2Ohm | N-Channel | 5A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT70N30Q3 | IXYS | $46.30 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | EAR99 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 830W | 1 | FET General Purpose Power | R-PSSO-G2 | 33 ns | 250ns | 38 ns | 70A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | 210A | 0.054Ohm | 1500 mJ | 300V | N-Channel | 4735pF @ 25V | 54m Ω @ 35A, 10V | 6.5V @ 4mA | 70A Tc | 98nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXKH47N60C | IXYS | $0.68 |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkh47n60c-datasheets-0779.pdf | TO-247-3 | Lead Free | 3 | 61 Weeks | 70MOhm | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 290W | 1 | FET General Purpose Power | R-PSFM-T3 | 27ns | 10 ns | 111 ns | 47A | 20V | SILICON | DRAIN | SWITCHING | TO-247AD | 600V | N-Channel | 70m Ω @ 30A, 10V | 4V @ 2mA | 47A Tc | 650nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTT140N075L2HV | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | compliant | 75V | 540W Tc | N-Channel | 9300pF @ 25V | 11m Ω @ 70A, 10V | 4.5V @ 250μA | 140A Tc | 275nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX32N90P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfk32n90p-datasheets-0702.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900V | 900V | 960W Tc | 80A | 0.3Ohm | 2000 mJ | N-Channel | 10600pF @ 25V | 300m Ω @ 16A, 10V | 6.5V @ 1mA | 32A Tc | 215nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFN80N60P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn80n60p3-datasheets-0905.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | Lead Free | 4 | 30 Weeks | 4 | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | Single | 960W | 1 | FET General Purpose Power | 48 ns | 87 ns | 66A | 30V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 960W Tc | 200A | 0.07Ohm | 2000 mJ | N-Channel | 13100pF @ 25V | 70m Ω @ 40A, 10V | 5V @ 8mA | 66A Tc | 190nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXTR120P20T | IXYS |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtr120p20t-datasheets-0935.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED, UL RECOGNIZED | SINGLE | 3 | 1 | Other Transistors | R-PSIP-T3 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 595W Tc | 400A | 0.032Ohm | 3000 mJ | P-Channel | 73000pF @ 25V | 32m Ω @ 60A, 10V | 4.5V @ 250μA | 90A Tc | 740nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||
| IXFX30N110P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx30n110p-datasheets-0978.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | 48ns | 52 ns | 83 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 1100V | 960W Tc | 75A | 1500 mJ | 1.1kV | N-Channel | 13600pF @ 25V | 360m Ω @ 15A, 10V | 6.5V @ 1mA | 30A Tc | 235nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFL80N50Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfl80n50q2-datasheets-1017.pdf | ISOPLUS264™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 380W | 1 | FET General Purpose Power | Not Qualified | 25ns | 11 ns | 60 ns | 64A | 30V | SILICON | ISOLATED | SWITCHING | 625W Tc | 55A | 0.066Ohm | 5000 mJ | 500V | N-Channel | 10500pF @ 25V | 66m Ω @ 40A, 10V | 5V @ 8mA | 55A Tc | 260nC @ 10V | 10V | ±30V |
