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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DSEI12-06AS-TUB | IXYS | $2.35 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | Standard | 600V | 50μA @ 600V | 1.7V @ 16A | 14A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI12-06A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | Not Applicable | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei1206a-datasheets-0561.pdf&product=ixys-dsei1206a-5997878 | 300V | 14A | TO-220-2 | 10.66mm | 9.15mm | 4.82mm | Lead Free | 2 | 28 Weeks | No SVHC | 2 | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 62W | 1 | Rectifier Diodes | 14A | 14A | 1.7V | 110A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 50μA | 600V | 110A | 600V | 50 ns | 50 ns | Standard | 600V | 14A | 1 | 50μA @ 600V | 1.7V @ 16A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DLA20IM800PC-TRL | IXYS | $2.56 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-dla20im800pctrl-datasheets-3831.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 4pF @ 400V 1MHz | 800V | 10μA @ 800V | 1.2V @ 20A | 20A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSA10IM100UC-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 175°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50W | 100V | 200μA | TO-252AA | Schottky | 200A | 1 | 10A | 68pF @ 24V 1MHz | 100V | 200μA @ 100V | 890mV @ 10A | 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP12-12AZ-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, PD-CASE, SNUBBER DIODE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 95W | 1200V | 100μA | 40ns | Standard | 90A | 1 | 12A | 5pF @ 600V 1MHz | 1200V | 100μA @ 1200V | 2.62V @ 15A | 12A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DHG10I600PM | IXYS | $6.39 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-dhg10i600pm-datasheets-5007.pdf | TO-220-3 Full Pack | 15.8mm | 20.3mm | 4.9mm | 2 | 28 Weeks | 2.299997g | 3 | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T2 | 10A | 100A | 15μA | ISOLATED | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 15μA | 600V | TO-220AC | 35 ns | 35 ns | Standard | 600V | 10A | 1 | 15μA @ 600V | 2.35V @ 10A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMA10IM1600PZ-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | YES | SINGLE | GULL WING | 150°C | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 100W | 1600V | 10μA | Standard | 110A | 1 | 10A | 4pF @ 400V 1MHz | 1600V | 10μA @ 1600V | 1.26V @ 10A | 10A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DHG60I1200HA | IXYS | $43.62 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-dhg60i1200ha-datasheets-5732.pdf | TO-247-3 | Lead Free | 2 | 20 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | e3 | PURE TIN | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | 3.06V | 430A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 125μA | 500A | 1.2kV | 200 ns | 75 ns | Standard | 1.2kV | 60A | 1 | 1200V | 125μA @ 1200V | 2.32V @ 60A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DHG20I600HA | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-dhg20i600ha-datasheets-6422.pdf | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | 2 | 20 Weeks | 6.500007g | No SVHC | 3 | yes | EAR99 | FREEWHEELING, SNUBBER DIODE | 8541.10.00.80 | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSFM-T2 | 20A | 2.31V | 150A | 25μA | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 140W | 150A | 30μA | 600V | 150A | 35 ns | 35 ns | Standard | 600V | 20A | 1 | 25μA @ 600V | 2.24V @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DNA30E2200PC-TUB | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-dna30e2200pc-datasheets-6408.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOW LEAKAGE CURRENT, PD-CASE | IEC-60747 | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE | ANODE | HIGH VOLTAGE | 0.25 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 210W | 40μA | Standard | 2.2kV | 30A | 340A | 1 | 7pF @ 700V 1MHz | 2200V | 40μA @ 2200V | 1.26V @ 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W1411LC320 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AB, B-PUK | 8 Weeks | W4 | Standard Recovery >500ns, > 200mA (Io) | Standard | 3200V | 30mA @ 3200V | 2V @ 2870A | 1411A | -55°C~160°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W3842MC240 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AC, K-PUK | 8 Weeks | W54 | Standard Recovery >500ns, > 200mA (Io) | 34μs | Standard | 2400V | 50mA @ 2400V | 1.2V @ 3000A | 3842A | -40°C~160°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W3477MC360 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AC, K-PUK | 8 Weeks | W54 | Standard Recovery >500ns, > 200mA (Io) | 38μs | Standard | 3600V | 100mA @ 3600V | 1.34V @ 3000A | 3470A | -40°C~160°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W5984TE400 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AE | 8 Weeks | Standard Recovery >500ns, > 200mA (Io) | 47μs | Standard | 4000V | 100mA @ 4000V | 1.25V @ 5000A | 5984A | -40°C~160°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W108CED180 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | ROHS3 Compliant | DO-200AE | 8 Weeks | Standard Recovery >500ns, > 200mA (Io) | Standard | 1800V | 10815A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W1263YC250 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | 2004 | DO-200AB, B-PUK | 42mm | 15.1mm | 42mm | 8 Weeks | 2 | Single | W2 | 1.2kA | Standard Recovery >500ns, > 200mA (Io) | 12.9kA | 30mA | 2.5kV | 17 μs | Standard | 2500V | 30mA @ 2500V | 2.12V @ 3770A | 1263A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DHG40I4500KO | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Tube | ISOPLUS264™ | 32 Weeks | NOT SPECIFIED | NOT SPECIFIED | Standard Recovery >500ns, > 200mA (Io) | 1.45μs | Standard | 13pF @ 1.8kV 1MHz | 4500V | 100μA @ 4500V | 3V @ 50A | 43A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DGS19-025CS | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-dgsk40025cs-datasheets-7943.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 110A | 400μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | GALLIUM ARSENIDE | 48W | TO-252AA | 26 ns | 26 ns | Schottky | 250V | 31A | 1 | 400μA @ 250V | 1.5V @ 10A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP60-025A | IXYS |
Min: 1 Mult: 1 |
download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-dsep60025a-datasheets-1747.pdf | TO-247-2 | 2 | yes | EAR99 | FREEWHEELING DIODE, SNUBBER DIODE | 8541.10.00.80 | SINGLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T2 | SINGLE | CATHODE | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | TO-247AD | 30 ns | Standard | 250V | 60A | 600A | 1 | 250V | 650μA @ 250V | 1.31V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DS9-12F | IXYS |
Min: 1 Mult: 1 |
download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 180°C | -40°C | AVALANCHE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ds908f-datasheets-1709.pdf | DO-203AA, DO-4, Stud | 1 | 2 | yes | EAR99 | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | O-MUPM-D1 | 1.4V | 250A | ANODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 3mA | 265A | 1.2kV | Standard | 1.2kV | 11A | 1 | 1200V | 3mA @ 1200V | 1.4V @ 36A | -40°C~180°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSB1I60SA | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-dsb1i60sa-datasheets-6498.pdf | DO-214AC, SMA | 2 | yes | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3W | Schottky | 60V | 1A | 1A | 60V | 100μA @ 60V | 580mV @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA6N50D2 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixta6n50d2-datasheets-1686.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 24 Weeks | 3 | yes | UL RECOGNIZED | No | SINGLE | GULL WING | 3 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 300W Tc | 0.5Ohm | N-Channel | 2800pF @ 25V | 500m Ω @ 3A, 0V | 6A Tc | 96nC @ 5V | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK40P50P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtk40p50p-datasheets-2169.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | 230MOhm | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 890W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 40A | 20V | SILICON | DRAIN | SWITCHING | 500V | 890W Tc | 3500 mJ | -500V | P-Channel | 11500pF @ 25V | 230m Ω @ 20A, 10V | 4V @ 1mA | 40A Tc | 205nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY08N50D2 | IXYS | $4.08 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixty08n50d2-datasheets-2799.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 19 Weeks | 3 | yes | No | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | 60W | 1 | FET General Purpose Power | R-PSSO-G2 | 800mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 60W Tc | N-Channel | 312pF @ 25V | 4.6 Ω @ 400mA, 0V | 800mA Tc | 12.7nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP38N30X3M | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 300V | 34W Tc | N-Channel | 2440pF @ 10V | 38A Tc | 35nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP72N30X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh72n30x3-datasheets-4703.pdf | TO-220-3 | 19 Weeks | 300V | 390W Tc | N-Channel | 5.4nF @ 25V | 19m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 82nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH450P2 | IXYS | $6.47 |
Min: 1 Mult: 1 |
download | PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixth450p2-datasheets-0479.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | FET General Purpose Power | R-PSFM-T3 | 16A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 35A | 0.33Ohm | 750 mJ | 500V | N-Channel | 2530pF @ 25V | 330m Ω @ 8A, 10V | 4.5V @ 250μA | 16A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN150N65X2 | IXYS | $37.05 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfn150n65x2-datasheets-8511.pdf | SOT-227-4, miniBLOC | 19 Weeks | 145A | 650V | 1040W Tc | N-Channel | 21000pF @ 25V | 17m Ω @ 75A, 10V | 5V @ 8mA | 145A Tc | 355nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB90N85X | IXYS | $38.59 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfb90n85x-datasheets-2302.pdf | TO-264-3, TO-264AA | 19 Weeks | yes | unknown | 90A | 850V | 1785W Tc | N-Channel | 13300pF @ 25V | 41m Ω @ 500mA, 10V | 5.5V @ 8mA | 90A Tc | 340nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP1R6N50D2 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r6n50d2-datasheets-1609.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | UL RECOGNIZED | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 70ns | 41 ns | 35 ns | 1.6A | 20V | SILICON | DRAIN | AMPLIFIER | 100W Tc | TO-220AB | 500V | N-Channel | 645pF @ 25V | 2.3 Ω @ 800mA, 0V | 1.6A Tc | 23.7nC @ 5V | Depletion Mode | ±20V |
